Raman scattering study of heavily Si-doped GaAs-Ga1-xAlxAs superlattices grown by molecular beam epitaxy

D. Kirillov; C. Webb; J. N. Eckstein

doi:10.1016/0022-0248(87)90371-X

Raman scattering study of heavily Si-doped GaAs-Ga_1-xAl_xAs superlattices grown by molecular beam epitaxy

D. Kirillov, C. Webb, J. N. Eckstein

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of heavy Si doping of GaAs-Ga_1-xAl_xAs superlattices were studied using Raman scattering. Electron plasma excitations coupled to longitudinal phonons were observed in the spectra. Transformation from three-dimensional plasmons in individual layers to two-dimensional plasmons in thin layer superlattices and finally to three-dimensional plasmons in very thin layer superlattices occurred when the layer thickness was decreased down to 10 Å. The influence of Al content in the barrier layers and methods of doping on the plasmon behavior was investigated.

Original language	English (US)
Pages (from-to)	91-96
Number of pages	6
Journal	Journal of Crystal Growth
Volume	81
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(87)90371-X
State	Published - Feb 2 1987
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Online availability

10.1016/0022-0248(87)90371-X

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Cite this

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title = "Raman scattering study of heavily Si-doped GaAs-Ga1-xAlxAs superlattices grown by molecular beam epitaxy",

abstract = "The effects of heavy Si doping of GaAs-Ga1-xAlxAs superlattices were studied using Raman scattering. Electron plasma excitations coupled to longitudinal phonons were observed in the spectra. Transformation from three-dimensional plasmons in individual layers to two-dimensional plasmons in thin layer superlattices and finally to three-dimensional plasmons in very thin layer superlattices occurred when the layer thickness was decreased down to 10 {\AA}. The influence of Al content in the barrier layers and methods of doping on the plasmon behavior was investigated.",

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AU - Eckstein, J. N.

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Y1 - 1987/2/2

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AB - The effects of heavy Si doping of GaAs-Ga1-xAlxAs superlattices were studied using Raman scattering. Electron plasma excitations coupled to longitudinal phonons were observed in the spectra. Transformation from three-dimensional plasmons in individual layers to two-dimensional plasmons in thin layer superlattices and finally to three-dimensional plasmons in very thin layer superlattices occurred when the layer thickness was decreased down to 10 Å. The influence of Al content in the barrier layers and methods of doping on the plasmon behavior was investigated.

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