Raman scattering study of heavily Si-doped GaAs-Ga1-xAlxAs superlattices grown by molecular beam epitaxy

D. Kirillov, C. Webb, J. N. Eckstein

Research output: Contribution to journalArticlepeer-review


The effects of heavy Si doping of GaAs-Ga1-xAlxAs superlattices were studied using Raman scattering. Electron plasma excitations coupled to longitudinal phonons were observed in the spectra. Transformation from three-dimensional plasmons in individual layers to two-dimensional plasmons in thin layer superlattices and finally to three-dimensional plasmons in very thin layer superlattices occurred when the layer thickness was decreased down to 10 Å. The influence of Al content in the barrier layers and methods of doping on the plasmon behavior was investigated.

Original languageEnglish (US)
Pages (from-to)91-96
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Feb 2 1987
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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