Raman scattering as a probe of the superconducting proximity effect

L. H. Greene; J. F. Dorsten; I. V. Roshchin; A. C. Abeyta; T. A. Tanzer; G. Kuchler; W. L. Feldmann; P. W. Bohn

doi:10.1007/BF02548118

Raman scattering as a probe of the superconducting proximity effect

L. H. Greene
, J. F. Dorsten
, I. V. Roshchin
, A. C. Abeyta
, T. A. Tanzer
, G. Kuchler
, W. L. Feldmann
, P. W. Bohn

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar⁺-etched (100)-n⁺InAs. Below T_c, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

Original language	English (US)
Pages (from-to)	3115-3122
Number of pages	8
Journal	Czechoslovak Journal of Physics
Volume	46
Issue number	SUPPL. 6
DOIs	https://doi.org/10.1007/BF02548118
State	Published - 1996
Externally published	Yes

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General Physics and Astronomy

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10.1007/BF02548118

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title = "Raman scattering as a probe of the superconducting proximity effect",

abstract = "Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40\% in comparison with the nearby L\_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.",

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language = "English (US)",

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T1 - Raman scattering as a probe of the superconducting proximity effect

AU - Greene, L. H.

AU - Dorsten, J. F.

AU - Roshchin, I. V.

AU - Abeyta, A. C.

AU - Tanzer, T. A.

AU - Kuchler, G.

AU - Feldmann, W. L.

AU - Bohn, P. W.

PY - 1996

Y1 - 1996

N2 - Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

AB - Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

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ER -

Raman scattering as a probe of the superconducting proximity effect

Abstract

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