Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.
|Original language||English (US)|
|Number of pages||8|
|Journal||Czechoslovak Journal of Physics|
|Issue number||SUPPL. 6|
|State||Published - 1996|
ASJC Scopus subject areas
- Physics and Astronomy(all)