Raman scattering as a probe of the superconducting proximity effect

L. H. Greene, J. F. Dorsten, I. V. Roshchin, A. C. Abeyta, T. A. Tanzer, G. Kuchler, W. L. Feldmann, P. W. Bohn

Research output: Contribution to journalArticlepeer-review

Abstract

Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

Original languageEnglish (US)
Pages (from-to)3115-3122
Number of pages8
JournalCzechoslovak Journal of Physics
Volume46
Issue numberSUPPL. 6
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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