Raman scattering as a probe of the superconducting proximity effect

L. H. Greene; J. F. Dorsten; I. V. Roshchin; A. C. Abeyta; T. A. Tanzer; G. Kuchler; W. L. Feldmann; P. W. Bohn

doi:10.1007/BF02548118

Raman scattering as a probe of the superconducting proximity effect

L. H. Greene, J. F. Dorsten, I. V. Roshchin, A. C. Abeyta, T. A. Tanzer, G. Kuchler, W. L. Feldmann, P. W. Bohn

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar⁺-etched (100)-n⁺InAs. Below T_c, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

Original language	English (US)
Pages (from-to)	3115-3122
Number of pages	8
Journal	Czechoslovak Journal of Physics
Volume	46
Issue number	SUPPL. 6
DOIs	https://doi.org/10.1007/BF02548118
State	Published - 1996

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Physics and Astronomy(all)

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10.1007/BF02548118

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title = "Raman scattering as a probe of the superconducting proximity effect",

abstract = "Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.",

author = "Greene, {L. H.} and Dorsten, {J. F.} and Roshchin, {I. V.} and Abeyta, {A. C.} and Tanzer, {T. A.} and G. Kuchler and Feldmann, {W. L.} and Bohn, {P. W.}",

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T1 - Raman scattering as a probe of the superconducting proximity effect

AU - Greene, L. H.

AU - Dorsten, J. F.

AU - Roshchin, I. V.

AU - Abeyta, A. C.

AU - Tanzer, T. A.

AU - Kuchler, G.

AU - Feldmann, W. L.

AU - Bohn, P. W.

PY - 1996

Y1 - 1996

N2 - Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

AB - Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60-100A) film of Nb, grown directly onto in-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by -40% in comparison with the nearby L_ bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

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Raman scattering as a probe of the superconducting proximity effect

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