We present an optical reflectance and Raman-scattering study of the (Formula presented) system as a function of temperature and doping (Formula presented) The metal-semiconductor transition in the (Formula presented) system is characterized by a change from a diffusive electronic Raman-scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic phase. We interpret this change in the scattering response as a crossover from a small-polaron-dominated regime at high temperatures to a large-polaron-dominated low-temperature regime. Interestingly, we observe evidence for the coexistence of large and small polarons in the low-temperature ferromagnetic phase. We contrast these results with those obtained for (Formula presented) which is a low-(Formula presented) magnetic semiconductor with similar properties to the manganites, but with a substantially reduced carrier density and polaron energy.
|Original language||English (US)|
|Number of pages||7|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics