TY - JOUR
T1 - Raman and optical spectroscopic studies of small-to-large polaron crossover in the perovskite manganese oxides
AU - Yoon, S.
AU - Liu, H.
AU - Schollerer, G.
AU - Cooper, S.
AU - Han, P.
AU - Payne, D.
PY - 1998
Y1 - 1998
N2 - We present an optical reflectance and Raman-scattering study of the (Formula presented) system as a function of temperature and doping (Formula presented) The metal-semiconductor transition in the (Formula presented) system is characterized by a change from a diffusive electronic Raman-scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic phase. We interpret this change in the scattering response as a crossover from a small-polaron-dominated regime at high temperatures to a large-polaron-dominated low-temperature regime. Interestingly, we observe evidence for the coexistence of large and small polarons in the low-temperature ferromagnetic phase. We contrast these results with those obtained for (Formula presented) which is a low-(Formula presented) magnetic semiconductor with similar properties to the manganites, but with a substantially reduced carrier density and polaron energy.
AB - We present an optical reflectance and Raman-scattering study of the (Formula presented) system as a function of temperature and doping (Formula presented) The metal-semiconductor transition in the (Formula presented) system is characterized by a change from a diffusive electronic Raman-scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic phase. We interpret this change in the scattering response as a crossover from a small-polaron-dominated regime at high temperatures to a large-polaron-dominated low-temperature regime. Interestingly, we observe evidence for the coexistence of large and small polarons in the low-temperature ferromagnetic phase. We contrast these results with those obtained for (Formula presented) which is a low-(Formula presented) magnetic semiconductor with similar properties to the manganites, but with a substantially reduced carrier density and polaron energy.
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U2 - 10.1103/PhysRevB.58.2795
DO - 10.1103/PhysRevB.58.2795
M3 - Article
AN - SCOPUS:0001699281
SN - 1098-0121
VL - 58
SP - 2795
EP - 2801
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 5
ER -