Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT

Yu Ju Chuang, Kurt Cimino, Mark Stuenkel, William Snodgrass, Milton Feng

Research output: Contribution to journalArticlepeer-review


This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.

Original languageEnglish (US)
Pages (from-to)21-23
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - Jan 2008


  • Heterojunction bipolar transistors (HBTs)
  • Noise measurement
  • Noise model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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