Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT

Yu Ju Chuang; Kurt Cimino; Mark Stuenkel; William Snodgrass; Milton Feng

doi:10.1109/LED.2007.912017

Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT

Yu Ju Chuang, Kurt Cimino, Mark Stuenkel, William Snodgrass, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.

Original language	English (US)
Pages (from-to)	21-23
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1109/LED.2007.912017
State	Published - Jan 2008

Keywords

Heterojunction bipolar transistors (HBTs)
Noise measurement
Noise model

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2007.912017

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title = "Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT",

abstract = "This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.",

keywords = "Heterojunction bipolar transistors (HBTs), Noise measurement, Noise model",

author = "Chuang, {Yu Ju} and Kurt Cimino and Mark Stuenkel and William Snodgrass and Milton Feng",

year = "2008",

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doi = "10.1109/LED.2007.912017",

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AU - Chuang, Yu Ju

AU - Cimino, Kurt

AU - Stuenkel, Mark

AU - Snodgrass, William

AU - Feng, Milton

PY - 2008/1

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N2 - This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.

AB - This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.

KW - Heterojunction bipolar transistors (HBTs)

KW - Noise measurement

KW - Noise model

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Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT

Abstract

Keywords

ASJC Scopus subject areas

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