Radiation induced segregation in titanium diboride

Shuguang Wei, Muhammad Waqas Qureshi, Jianqi Xi, Jun Young Kim, Xing Wang, Jingrui Wei, Ranran Su, Longfei Liu, William O. Nachlas, John H. Perepezko, Hongliang Zhang, Izabela Szlufarska

Research output: Contribution to journalArticlepeer-review

Abstract

Radiation-induced segregation (RIS) is one of the most dramatic changes that can occur at grain boundaries (GBs) during irradiation. In ceramics, RIS has been rarely studied and the underlying mechanisms are not well understood. Here, we used a combination of experiments and simulations to demonstrate RIS in TiB2. Specifically, we found that radiation causes a significant B depletion and a modest Ti enrichment in the GB regions. We demonstrate that B depletion is a result of the formation of BI-VTi complex and the migration of B vacancies to the GB, where the BI represents B interstitial and VTi represents the Ti vacancy. The Ti enrichment is driven by the differences between the diffusivities of Ti interstitials and vacancies. The distinct RIS mechanisms found in TiB2 shed new light on the relation between the complex energy landscape and defect evolution in ceramics.

Original languageEnglish (US)
Article number119739
JournalActa Materialia
Volume267
DOIs
StatePublished - Apr 1 2024
Externally publishedYes

Keywords

  • Anti-site defects
  • Defect migration
  • Radiation induced segregation
  • Titanium diboride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Fingerprint

Dive into the research topics of 'Radiation induced segregation in titanium diboride'. Together they form a unique fingerprint.

Cite this