Radiation-induced segregation has been studied in random solid solution alloys Ni-10%Al and Ni-6%Si, and in the ordered (L12 structure) intermetallics Ni3Si and Ni3Al. These materials were irradiated with 2 MeV He+ ions at a temperature between 0.45 and 0.557Tm and at an ion dose rate of approximately 1 × 10-4 dpa per second. Subsequent Auger Electron Spectroscopy analysis showed that silicon segregated to the surface in the Ni-6% Si and Ni3Si alloys, and aluminum segregated away from the near surface region in the Ni-10% Al alloy. The Ni3Al samples exhibited no detectable segregation with respect to depth from the sample surface. The mechanisms that may give rise to this resistance to radiation induced segregation will be examined in terms of the mobility of the alloying constituents, ordering energies and atomic sizes.
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Materials Science(all)
- Nuclear Energy and Engineering