Radiation-induced segregation behavior in random and ordered face-centered cubic materials

T. X. Bui; I. M. Robertson; J. L. Klatt; R. S. Averback; M. A. Kirk

doi:10.1016/0022-3115(93)90094-F

Radiation-induced segregation behavior in random and ordered face-centered cubic materials

T. X. Bui, I. M. Robertson, J. L. Klatt, R. S. Averback, M. A. Kirk

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Radiation-induced segregation has been studied in random solid solution alloys Ni-10%Al and Ni-6%Si, and in the ordered (L1₂ structure) intermetallics Ni₃Si and Ni₃Al. These materials were irradiated with 2 MeV He⁺ ions at a temperature between 0.45 and 0.557T_m and at an ion dose rate of approximately 1 × 10^-4 dpa per second. Subsequent Auger Electron Spectroscopy analysis showed that silicon segregated to the surface in the Ni-6% Si and Ni₃Si alloys, and aluminum segregated away from the near surface region in the Ni-10% Al alloy. The Ni₃Al samples exhibited no detectable segregation with respect to depth from the sample surface. The mechanisms that may give rise to this resistance to radiation induced segregation will be examined in terms of the mobility of the alloying constituents, ordering energies and atomic sizes.

Original language	English (US)
Pages (from-to)	312-316
Number of pages	5
Journal	Journal of Nuclear Materials
Volume	205
Issue number	C
DOIs	https://doi.org/10.1016/0022-3115(93)90094-F
State	Published - Oct 1993

ASJC Scopus subject areas

Nuclear and High Energy Physics
Materials Science(all)
Nuclear Energy and Engineering

Access to Document

10.1016/0022-3115(93)90094-F

Cite this

@article{65643dc5e8fb4f8d94533e738a8f08a0,

title = "Radiation-induced segregation behavior in random and ordered face-centered cubic materials",

abstract = "Radiation-induced segregation has been studied in random solid solution alloys Ni-10%Al and Ni-6%Si, and in the ordered (L12 structure) intermetallics Ni3Si and Ni3Al. These materials were irradiated with 2 MeV He+ ions at a temperature between 0.45 and 0.557Tm and at an ion dose rate of approximately 1 × 10-4 dpa per second. Subsequent Auger Electron Spectroscopy analysis showed that silicon segregated to the surface in the Ni-6% Si and Ni3Si alloys, and aluminum segregated away from the near surface region in the Ni-10% Al alloy. The Ni3Al samples exhibited no detectable segregation with respect to depth from the sample surface. The mechanisms that may give rise to this resistance to radiation induced segregation will be examined in terms of the mobility of the alloying constituents, ordering energies and atomic sizes.",

author = "Bui, {T. X.} and Robertson, {I. M.} and Klatt, {J. L.} and Averback, {R. S.} and Kirk, {M. A.}",

note = "Funding Information: * This work was supported by the Department of Energy through grant DEFGO2-91Er45439 (U of I) and contract W-31-109-Eng-38 (ANL).",

year = "1993",

month = oct,

doi = "10.1016/0022-3115(93)90094-F",

language = "English (US)",

volume = "205",

pages = "312--316",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier",

number = "C",

}

TY - JOUR

T1 - Radiation-induced segregation behavior in random and ordered face-centered cubic materials

AU - Bui, T. X.

AU - Robertson, I. M.

AU - Klatt, J. L.

AU - Averback, R. S.

AU - Kirk, M. A.

N1 - Funding Information: * This work was supported by the Department of Energy through grant DEFGO2-91Er45439 (U of I) and contract W-31-109-Eng-38 (ANL).

PY - 1993/10

Y1 - 1993/10

N2 - Radiation-induced segregation has been studied in random solid solution alloys Ni-10%Al and Ni-6%Si, and in the ordered (L12 structure) intermetallics Ni3Si and Ni3Al. These materials were irradiated with 2 MeV He+ ions at a temperature between 0.45 and 0.557Tm and at an ion dose rate of approximately 1 × 10-4 dpa per second. Subsequent Auger Electron Spectroscopy analysis showed that silicon segregated to the surface in the Ni-6% Si and Ni3Si alloys, and aluminum segregated away from the near surface region in the Ni-10% Al alloy. The Ni3Al samples exhibited no detectable segregation with respect to depth from the sample surface. The mechanisms that may give rise to this resistance to radiation induced segregation will be examined in terms of the mobility of the alloying constituents, ordering energies and atomic sizes.

AB - Radiation-induced segregation has been studied in random solid solution alloys Ni-10%Al and Ni-6%Si, and in the ordered (L12 structure) intermetallics Ni3Si and Ni3Al. These materials were irradiated with 2 MeV He+ ions at a temperature between 0.45 and 0.557Tm and at an ion dose rate of approximately 1 × 10-4 dpa per second. Subsequent Auger Electron Spectroscopy analysis showed that silicon segregated to the surface in the Ni-6% Si and Ni3Si alloys, and aluminum segregated away from the near surface region in the Ni-10% Al alloy. The Ni3Al samples exhibited no detectable segregation with respect to depth from the sample surface. The mechanisms that may give rise to this resistance to radiation induced segregation will be examined in terms of the mobility of the alloying constituents, ordering energies and atomic sizes.

UR - http://www.scopus.com/inward/record.url?scp=0027681477&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027681477&partnerID=8YFLogxK

U2 - 10.1016/0022-3115(93)90094-F

DO - 10.1016/0022-3115(93)90094-F

M3 - Article

AN - SCOPUS:0027681477

VL - 205

SP - 312

EP - 316

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

IS - C

ER -

Radiation-induced segregation behavior in random and ordered face-centered cubic materials

Abstract

ASJC Scopus subject areas

Access to Document

Other links

Fingerprint

Cite this