Quenching of porous silicon photoluminescence by deposition of metal adsorbates

D. Andsager, J. Hilliard, J. M. Hetrick, L. H. Abuhassan, M. Plisch, M. H. Nayfeh

Research output: Contribution to journalArticlepeer-review


Various metals were deposited on luminescent porous silicon (PS) by immersion in metal ion solutions and by evaporation. The photoluminescence (PL) was quenched upon immersion in ionic solutions of Cu, Ag, and Au but not noticeably quenched in other ionic solutions. Evaporation of 100 Å of Cu or 110 Å of Au was not observed to quench PL. Auger electron spectroscopy performed on samples quenched and then immediately removed from solution showed a metallic concentration in the PS layer of order 10 at.%, but persisting to a depth of order 3000 Å.

Original languageEnglish (US)
Pages (from-to)4783-4785
Number of pages3
JournalJournal of Applied Physics
Issue number7
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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