Quasireversible magnetoresistance in exchange-spring tunnel junctions

M. Zhu, M. J. Wilson, P. Mitra, P. Schiffer, N. Samarth

Research output: Contribution to journalArticlepeer-review

Abstract

We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

Original languageEnglish (US)
Article number195307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number19
DOIs
StatePublished - Nov 10 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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