Quantum-well transistor laser for optical interconnect and photonic integrated circuits

M. Feng, H. W. Then, F. Tan, M. K. Wu, R. Bambery, Nick Holonyak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The heterojunction bipolar transistor laser, inherently a fast switching device, operates by transporting small minority base charge densities ∼1016 cm-3 over nano-scale base thickness (< 900A) in picoseconds. The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 200 GHz. Three-port operation expands the use of the transistor laser (TL) to optical interconnect and photonic integrated circuits.

Original languageEnglish (US)
Title of host publication2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages115-122
Number of pages8
ISBN (Electronic)9781479972302
DOIs
StatePublished - Dec 9 2014
Event2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States
Duration: Sep 28 2014Oct 1 2014

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Other

Other2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
CountryUnited States
CityCoronado
Period9/28/1410/1/14

Keywords

  • Heterojunction bipolar transistor
  • quantum well laser
  • three-port laser
  • transistor laser (TL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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