@inproceedings{7a6a9c195b954be6baecedbb0f37cc12,
title = "Quantum-well transistor laser for optical interconnect and photonic integrated circuits",
abstract = "The heterojunction bipolar transistor laser, inherently a fast switching device, operates by transporting small minority base charge densities ∼1016 cm-3 over nano-scale base thickness (< 900A) in picoseconds. The insertion of quantum-wells and tilted charge in the short base of a transistor reduces recombination lifetime below 30 ps which is critical for extending the direct modulation bandwidth of the semiconductor laser towards 200 GHz. Three-port operation expands the use of the transistor laser (TL) to optical interconnect and photonic integrated circuits.",
keywords = "Heterojunction bipolar transistor, quantum well laser, three-port laser, transistor laser (TL)",
author = "M. Feng and Then, {H. W.} and F. Tan and Wu, {M. K.} and R. Bambery and Nick Holonyak",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 ; Conference date: 28-09-2014 Through 01-10-2014",
year = "2014",
month = dec,
day = "9",
doi = "10.1109/BCTM.2014.6981297",
language = "English (US)",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "115--122",
booktitle = "2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014",
address = "United States",
}