Quantum-well-base heterojunction bipolar light-emitting transistor

M. Feng, N. Holonyak, R. Chan

Research output: Contribution to journalArticlepeer-review


The use of InGaAs quantum wells in the base layer of light emitting InGaP/GaAs heterojunction biopolar transistor (LET) for enhanced radiative recombination was analyzed. Two 50 Å In 1-xGa xAs quantum wells (QW) as electron traps were embedded in the 300 Å base layer. This improved the light emission intensity compared to a similar LET structure without QW in the base. Gigahertz operation of the QW LET with simultaneously amplified optical and electrical output with signal modulation was also demonstrated.

Original languageEnglish (US)
Pages (from-to)1952-1954
Number of pages3
JournalApplied Physics Letters
Issue number11
StatePublished - Mar 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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