Quantum-well-base heterojunction bipolar light-emitting transistor

M. Feng; N. Holonyak; R. Chan

doi:10.1063/1.1669071

Quantum-well-base heterojunction bipolar light-emitting transistor

M. Feng, N. Holonyak, R. Chan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The use of InGaAs quantum wells in the base layer of light emitting InGaP/GaAs heterojunction biopolar transistor (LET) for enhanced radiative recombination was analyzed. Two 50 Å In _1-xGa _xAs quantum wells (QW) as electron traps were embedded in the 300 Å base layer. This improved the light emission intensity compared to a similar LET structure without QW in the base. Gigahertz operation of the QW LET with simultaneously amplified optical and electrical output with signal modulation was also demonstrated.

Original language	English (US)
Pages (from-to)	1952-1954
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1669071
State	Published - Mar 15 2004

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Physics and Astronomy (miscellaneous)

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10.1063/1.1669071

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abstract = "The use of InGaAs quantum wells in the base layer of light emitting InGaP/GaAs heterojunction biopolar transistor (LET) for enhanced radiative recombination was analyzed. Two 50 {\AA} In 1-xGa xAs quantum wells (QW) as electron traps were embedded in the 300 {\AA} base layer. This improved the light emission intensity compared to a similar LET structure without QW in the base. Gigahertz operation of the QW LET with simultaneously amplified optical and electrical output with signal modulation was also demonstrated.",

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AU - Chan, R.

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AB - The use of InGaAs quantum wells in the base layer of light emitting InGaP/GaAs heterojunction biopolar transistor (LET) for enhanced radiative recombination was analyzed. Two 50 Å In 1-xGa xAs quantum wells (QW) as electron traps were embedded in the 300 Å base layer. This improved the light emission intensity compared to a similar LET structure without QW in the base. Gigahertz operation of the QW LET with simultaneously amplified optical and electrical output with signal modulation was also demonstrated.

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Quantum-well-base heterojunction bipolar light-emitting transistor

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