Quantum well active region with three dimensional barriers and fabrication

Victor C Elarde (Inventor), James J Coleman (Inventor)

Research output: Patent

Abstract

The invention provides a quantum well active region for an optoelectronic device. The quantum well active region includes barrier layers of high bandgap material. A quantum well of low bandgap material is between the barrier layers. Three-dimensional high bandgap barriers are in the quantum well. A preferred semiconductor laser of the invention includes a quantum well active region of the invention. Cladding layers are around the quantum well active region, as well as a waveguide structure.
Original languageEnglish (US)
U.S. patent number8416823
Filing date4/29/08
StatePublished - Apr 9 2013

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