Quantum thermoelectric effects in resonant tunneling real-space transfer

We present the analysis of a new mechanism for tunneling real-space transfer (TRST) in modulation-doped structures. The conditions for TRST are determined by the quantum thermoelectric properties of the electron systems which results in instabilities. We predict high-frequency oscillations limited only by the tunneling transfer time and thermalization between electron channels. Negative differential resistance and hysteresis are predicted in the I-V characteristics of the modulation-doped structures; recent experiments corroborate the existence of the new mechanism.