Quantum potential approaches for nano-scale device simulation

Hideaki Tsuchiya, Brian Winstead, Umberto Ravaioli

Research output: Contribution to journalArticle

Abstract

With the progress of integrated technology, the feature size of experimental electron devices have already been scaled down deeply into the sub-0.1 μm region. For such ultra-small devices, it is increasingly important to take quantum mechanical effects into account for device simulation. In this paper, we present a new approach for quantum modeling, applicable to multi-dimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum effects such as tunneling and quantum confinement effects can be incorporated in the standard Monte Carlo techniques.

Original languageEnglish (US)
Pages (from-to)335-340
Number of pages6
JournalVLSI Design
Volume13
Issue number1-4
DOIs
StatePublished - Jan 1 2001

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Keywords

  • Monte Carlo simulation
  • Quantum effects
  • Wigner function

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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