Quantum dots fabricated in InP/InGaAs by free Cl₂ gas etching and metalorganic chemical vapor deposition regrowth

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• InGaAs 100%
• Quantum Dots 100%
• Regrowth 100%
• Cl2 Gas 100%
• Gas Etching 100%
• Photoluminescence 66%
• Scanning Electron Microscopy 33%
• In Situ 33%
• 3D Structure 33%
• Sidewall 33%
• Nonradiative Recombination 33%
• Biaxial Strain 33%
• Selective Area Growth 33%
• Electron Beam Lithography 33%
• Low-temperature Photoluminescence 33%
• Quantum Well-dots 33%
• Dot Size 33%
• Normalized Intensity 33%
• Thermal Etching 33%
• SiO2 Mask 33%

Material Science

• Chemical Vapor Deposition 100%
• Indium Gallium Arsenide 100%
• Photoluminescence 100%
• Quantum Dot 100%
• Scanning Electron Microscopy 33%
• Lithography 33%
• Quantum Well 33%