Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth

R. Panepucci; E. Reuter; P. Fay; C. Youtsey; J. Kluender; C. Caneau; J. J. Coleman; S. G. Bishop; I. Adesida

doi:10.1116/1.588741

Quantum dots fabricated in InP/InGaAs by free Cl₂ gas etching and metalorganic chemical vapor deposition regrowth

R. Panepucci, E. Reuter, P. Fay, C. Youtsey, J. Kluender, C. Caneau, J. J. Coleman, S. G. Bishop, I. Adesida

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The free Cl₂ thermal etching of InGaAs/InP was characterized for the fabrication of quantum well dots (QDs) The effects of mask shape on the three-dimensional structure of the dot was investigated Quantum dots with dimensions as small as 56 nm were fabricated using electron beam lithography and free Cl₂ etching. The dots were characterized using scanning electron microscopy and low temperature photoluminescence (PL). Metalorganic chemical vapor deposition (MOCVD) regrowth of InP on quantum dots of different mask shapes was investigated. The effect of non-radiative recombination at the etched sidewall was evaluated through the normalized intensity of the PL A red shift of the PL peak with decreasing dot sizes was observed for the as-etched structures and attributed to the effect of residual compressive biaxial strain on the InGaAs layer. Free Cl₂ etching is an important etch technique for in situ etch and regrowth processes due to the high quality of the etched interface and the ability to perform selective area regrowth with a SiO₂ mask still present.

Original language	English (US)
Pages (from-to)	3641-3645
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	6
DOIs	https://doi.org/10.1116/1.588741
State	Published - 1996

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Panepucci, R., Reuter, E., Fay, P., Youtsey, C., Kluender, J., Caneau, C., Coleman, J. J., Bishop, S. G., & Adesida, I. (1996). Quantum dots fabricated in InP/InGaAs by free Cl₂ gas etching and metalorganic chemical vapor deposition regrowth. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14(6), 3641-3645. https://doi.org/10.1116/1.588741

Panepucci, R, Reuter, E, Fay, P, Youtsey, C, Kluender, J, Caneau, C, Coleman, JJ, Bishop, SG & Adesida, I 1996, 'Quantum dots fabricated in InP/InGaAs by free Cl₂ gas etching and metalorganic chemical vapor deposition regrowth', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 14, no. 6, pp. 3641-3645. https://doi.org/10.1116/1.588741

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title = "Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth",

abstract = "The free Cl2 thermal etching of InGaAs/InP was characterized for the fabrication of quantum well dots (QDs) The effects of mask shape on the three-dimensional structure of the dot was investigated Quantum dots with dimensions as small as 56 nm were fabricated using electron beam lithography and free Cl2 etching. The dots were characterized using scanning electron microscopy and low temperature photoluminescence (PL). Metalorganic chemical vapor deposition (MOCVD) regrowth of InP on quantum dots of different mask shapes was investigated. The effect of non-radiative recombination at the etched sidewall was evaluated through the normalized intensity of the PL A red shift of the PL peak with decreasing dot sizes was observed for the as-etched structures and attributed to the effect of residual compressive biaxial strain on the InGaAs layer. Free Cl2 etching is an important etch technique for in situ etch and regrowth processes due to the high quality of the etched interface and the ability to perform selective area regrowth with a SiO2 mask still present.",

author = "R. Panepucci and E. Reuter and P. Fay and C. Youtsey and J. Kluender and C. Caneau and Coleman, {J. J.} and Bishop, {S. G.} and I. Adesida",

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AU - Panepucci, R.

AU - Reuter, E.

AU - Fay, P.

AU - Youtsey, C.

AU - Kluender, J.

AU - Caneau, C.

AU - Coleman, J. J.

AU - Bishop, S. G.

AU - Adesida, I.

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N2 - The free Cl2 thermal etching of InGaAs/InP was characterized for the fabrication of quantum well dots (QDs) The effects of mask shape on the three-dimensional structure of the dot was investigated Quantum dots with dimensions as small as 56 nm were fabricated using electron beam lithography and free Cl2 etching. The dots were characterized using scanning electron microscopy and low temperature photoluminescence (PL). Metalorganic chemical vapor deposition (MOCVD) regrowth of InP on quantum dots of different mask shapes was investigated. The effect of non-radiative recombination at the etched sidewall was evaluated through the normalized intensity of the PL A red shift of the PL peak with decreasing dot sizes was observed for the as-etched structures and attributed to the effect of residual compressive biaxial strain on the InGaAs layer. Free Cl2 etching is an important etch technique for in situ etch and regrowth processes due to the high quality of the etched interface and the ability to perform selective area regrowth with a SiO2 mask still present.

AB - The free Cl2 thermal etching of InGaAs/InP was characterized for the fabrication of quantum well dots (QDs) The effects of mask shape on the three-dimensional structure of the dot was investigated Quantum dots with dimensions as small as 56 nm were fabricated using electron beam lithography and free Cl2 etching. The dots were characterized using scanning electron microscopy and low temperature photoluminescence (PL). Metalorganic chemical vapor deposition (MOCVD) regrowth of InP on quantum dots of different mask shapes was investigated. The effect of non-radiative recombination at the etched sidewall was evaluated through the normalized intensity of the PL A red shift of the PL peak with decreasing dot sizes was observed for the as-etched structures and attributed to the effect of residual compressive biaxial strain on the InGaAs layer. Free Cl2 etching is an important etch technique for in situ etch and regrowth processes due to the high quality of the etched interface and the ability to perform selective area regrowth with a SiO2 mask still present.

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