Abstract

We investigate quantum confinement induced strain in quantum dots. While the impact of mechanical strain on the electronic structure of quantum dots is well studied, the "reverse" effect remains relatively unexplored. Even in the complete absence of external stress, for very small sizes (1-3 nm range), the electronic structure change due to quantum confinement may induce a strain in the quantum dot, which in turn will further alter the electronic structure. Despite the limitations of an envelope function approach for small sizes, a multiband analytical model is developed to make explicit the qualitative features of this phenomenon with physical interpretation in terms of acoustic polarons. We quantitatively predict the induced strain due to quantum confinement and the polaron binding energy for the example cases of Si and GaAs. The Si polaron binding energy calculated from the developed model compares favorably with both our density-functional and semiempirical atomistic calculations.

Original languageEnglish (US)
Article number155319
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number15
DOIs
StatePublished - Apr 16 2007

Fingerprint

Quantum confinement
Semiconductor quantum dots
quantum dots
electronic structure
Electronic structure
Gene Conversion
binding energy
Binding energy
polarons
Polarons
envelopes
Analytical models
acoustics
Acoustics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Quantum confinement induced strain in quantum dots. / Zhang, Xinyuan; Sharma, Pradeep; Johnson, H. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 15, 155319, 16.04.2007.

Research output: Contribution to journalArticle

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