Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects

Shimin Mao, Shipeng Shu, Jian Zhou, Robert S. Averback, Shen J. Dillon

Research output: Contribution to journalArticle

Abstract

The efficacy of heterointerfaces as sinks for point defects in Cu was characterized using local measurements of tracer-impurity radiation-enhanced diffusion (RED). The measurements were performed as a function of irradiation temperature and Cu thickness in multilayer samples, with the results being compared to steady-state kinetic rate equations to determine sink strengths. Cu-Nb Kurdjumov-Sachs (KS) interfaces are found to be nearly ideal sinks for point defects, whereas Cu-Ni (1 1 1) heteroepitaxial interfaces are poor sinks; Cu-V KS interfaces are intermediate. Quantitative analysis of the RED data also yields the defect production efficiency for freely migrating defects in Cu, which is on the order of 1% for MeV Kr irradiation.

Original languageEnglish (US)
Pages (from-to)328-335
Number of pages8
JournalActa Materialia
Volume82
DOIs
StatePublished - Jan 1 2015

Keywords

  • Interface
  • Kurdjumov-Sachs
  • Sink efficiency

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects'. Together they form a unique fingerprint.

  • Cite this