Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects

Shimin Mao; Shipeng Shu; Jian Zhou; Robert S. Averback; Shen J. Dillon

doi:10.1016/j.actamat.2014.09.011

Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects

Shimin Mao, Shipeng Shu, Jian Zhou, Robert S. Averback, Shen J. Dillon

Research output: Contribution to journal › Article › peer-review

Abstract

The efficacy of heterointerfaces as sinks for point defects in Cu was characterized using local measurements of tracer-impurity radiation-enhanced diffusion (RED). The measurements were performed as a function of irradiation temperature and Cu thickness in multilayer samples, with the results being compared to steady-state kinetic rate equations to determine sink strengths. Cu-Nb Kurdjumov-Sachs (KS) interfaces are found to be nearly ideal sinks for point defects, whereas Cu-Ni (1 1 1) heteroepitaxial interfaces are poor sinks; Cu-V KS interfaces are intermediate. Quantitative analysis of the RED data also yields the defect production efficiency for freely migrating defects in Cu, which is on the order of 1% for MeV Kr irradiation.

Original language	English (US)
Pages (from-to)	328-335
Number of pages	8
Journal	Acta Materialia
Volume	82
DOIs	https://doi.org/10.1016/j.actamat.2014.09.011
State	Published - Jan 1 2015

Keywords

Interface
Kurdjumov-Sachs
Sink efficiency

ASJC Scopus subject areas

Ceramics and Composites
Metals and Alloys
Polymers and Plastics
Electronic, Optical and Magnetic Materials

Online availability

10.1016/j.actamat.2014.09.011

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title = "Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects",

abstract = "The efficacy of heterointerfaces as sinks for point defects in Cu was characterized using local measurements of tracer-impurity radiation-enhanced diffusion (RED). The measurements were performed as a function of irradiation temperature and Cu thickness in multilayer samples, with the results being compared to steady-state kinetic rate equations to determine sink strengths. Cu-Nb Kurdjumov-Sachs (KS) interfaces are found to be nearly ideal sinks for point defects, whereas Cu-Ni (1 1 1) heteroepitaxial interfaces are poor sinks; Cu-V KS interfaces are intermediate. Quantitative analysis of the RED data also yields the defect production efficiency for freely migrating defects in Cu, which is on the order of 1% for MeV Kr irradiation.",

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T1 - Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects

AU - Mao, Shimin

AU - Shu, Shipeng

AU - Zhou, Jian

AU - Averback, Robert S.

AU - Dillon, Shen J.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The efficacy of heterointerfaces as sinks for point defects in Cu was characterized using local measurements of tracer-impurity radiation-enhanced diffusion (RED). The measurements were performed as a function of irradiation temperature and Cu thickness in multilayer samples, with the results being compared to steady-state kinetic rate equations to determine sink strengths. Cu-Nb Kurdjumov-Sachs (KS) interfaces are found to be nearly ideal sinks for point defects, whereas Cu-Ni (1 1 1) heteroepitaxial interfaces are poor sinks; Cu-V KS interfaces are intermediate. Quantitative analysis of the RED data also yields the defect production efficiency for freely migrating defects in Cu, which is on the order of 1% for MeV Kr irradiation.

AB - The efficacy of heterointerfaces as sinks for point defects in Cu was characterized using local measurements of tracer-impurity radiation-enhanced diffusion (RED). The measurements were performed as a function of irradiation temperature and Cu thickness in multilayer samples, with the results being compared to steady-state kinetic rate equations to determine sink strengths. Cu-Nb Kurdjumov-Sachs (KS) interfaces are found to be nearly ideal sinks for point defects, whereas Cu-Ni (1 1 1) heteroepitaxial interfaces are poor sinks; Cu-V KS interfaces are intermediate. Quantitative analysis of the RED data also yields the defect production efficiency for freely migrating defects in Cu, which is on the order of 1% for MeV Kr irradiation.

KW - Interface

KW - Kurdjumov-Sachs

KW - Sink efficiency

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Quantitative comparison of sink efficiency of Cu-Nb, Cu-V and Cu-Ni interfaces for point defects

Abstract

Keywords

ASJC Scopus subject areas

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