Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

Christoph Baeumer, Christoph Schmitz, Astrid Marchewka, David N. Mueller, Richard Valenta, Johanna Hackl, Nicolas Raab, Steven P. Rogers, M. Imtiaz Khan, Slavomir Nemsak, Moonsub Shim, Stephan Menzel, Claus Michael Schneider, Rainer Waser, Regina Dittmann

Research output: Contribution to journalArticlepeer-review

Abstract

The continuing revolutionary success of mobile computing and smart devices calls for the development of novel, cost-And energy-efficient memories. Resistive switching is attractive because of, inter alia, increased switching speed and device density. On electrical stimulus, complex nanoscale redox processes are suspected to induce a resistance change in memristive devices. Quantitative information about these processes, which has been experimentally inaccessible so far, is essential for further advances. Here we use in operando spectromicroscopy to verify that redox reactions drive the resistance change. A remarkable agreement between experimental quantification of the redox state and device simulation reveals that changes in donor concentration by a factor of 2-3 at electrode-oxide interfaces cause a modulation of the effective Schottky barrier and lead to >2 orders of magnitude change in device resistance. These findings allow realistic device simulations, opening a route to less empirical and more predictive design of future memory cells.

Original languageEnglish (US)
Article number12398
JournalNature communications
Volume7
DOIs
StatePublished - Aug 19 2016
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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