Pyroelectric electron emission from nanometer-thick films of PbZr xTi1-xO3

Patrick C. Fletcher; Vengadesh Kumara R. Mangalam; Lane W. Martin; William P. King

doi:10.1063/1.4806973

Pyroelectric electron emission from nanometer-thick films of PbZr _xTi_1-xO₃

Patrick C. Fletcher, Vengadesh Kumara R. Mangalam, Lane W. Martin, William P. King

Research output: Contribution to journal › Article › peer-review

Abstract

We report pyroelectric emission from PbZr_xTi_1-xO ₃ (PZT) thin films on nanometer-sharp tips. The epitaxial PZT films are 30 nm thick and grown directly on single-crystal silicon tips. Pyroelectric emission occurs for heating rates of 50 °C/min in a 20 V/μm external field. The emission current is a maximum of 240 nA when the heating rate is 100 °C/min and the electric field strength is 6.7 V/μm. The emitted charge is ∼7 of that expected for a perfect thin film emitter of epitaxial PbZr _xTi_1-xO₃. We calculate that pyroelectric emission can occur without an applied field if the heating rate exceeds 4.0 × 10⁷ °C/min.

Original language	English (US)
Article number	192908
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4806973
State	Published - May 13 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4806973

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Cite this

@article{fa4e4be881da4d90a75d42efcbb5daf8,

title = "Pyroelectric electron emission from nanometer-thick films of PbZr xTi1-xO3",

abstract = "We report pyroelectric emission from PbZrxTi1-xO 3 (PZT) thin films on nanometer-sharp tips. The epitaxial PZT films are 30 nm thick and grown directly on single-crystal silicon tips. Pyroelectric emission occurs for heating rates of 50 °C/min in a 20 V/μm external field. The emission current is a maximum of 240 nA when the heating rate is 100 °C/min and the electric field strength is 6.7 V/μm. The emitted charge is ∼7 of that expected for a perfect thin film emitter of epitaxial PbZr xTi1-xO3. We calculate that pyroelectric emission can occur without an applied field if the heating rate exceeds 4.0 × 107 °C/min.",

author = "Fletcher, {Patrick C.} and Mangalam, {Vengadesh Kumara R.} and Martin, {Lane W.} and King, {William P.}",

note = "Funding Information: This work was supported by the DARPA AXIS program under Grant No. N66001-11-1-4195 and by ONR N00014-10-1-0525. Portions of this work were performed in the Materials Research Laboratory Central Facilities, University of Illinois.",

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doi = "10.1063/1.4806973",

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AU - Fletcher, Patrick C.

AU - Mangalam, Vengadesh Kumara R.

AU - Martin, Lane W.

AU - King, William P.

N1 - Funding Information: This work was supported by the DARPA AXIS program under Grant No. N66001-11-1-4195 and by ONR N00014-10-1-0525. Portions of this work were performed in the Materials Research Laboratory Central Facilities, University of Illinois.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - We report pyroelectric emission from PbZrxTi1-xO 3 (PZT) thin films on nanometer-sharp tips. The epitaxial PZT films are 30 nm thick and grown directly on single-crystal silicon tips. Pyroelectric emission occurs for heating rates of 50 °C/min in a 20 V/μm external field. The emission current is a maximum of 240 nA when the heating rate is 100 °C/min and the electric field strength is 6.7 V/μm. The emitted charge is ∼7 of that expected for a perfect thin film emitter of epitaxial PbZr xTi1-xO3. We calculate that pyroelectric emission can occur without an applied field if the heating rate exceeds 4.0 × 107 °C/min.

AB - We report pyroelectric emission from PbZrxTi1-xO 3 (PZT) thin films on nanometer-sharp tips. The epitaxial PZT films are 30 nm thick and grown directly on single-crystal silicon tips. Pyroelectric emission occurs for heating rates of 50 °C/min in a 20 V/μm external field. The emission current is a maximum of 240 nA when the heating rate is 100 °C/min and the electric field strength is 6.7 V/μm. The emitted charge is ∼7 of that expected for a perfect thin film emitter of epitaxial PbZr xTi1-xO3. We calculate that pyroelectric emission can occur without an applied field if the heating rate exceeds 4.0 × 107 °C/min.

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