Pulsed metalorganic chemical vapor deposition of high quality AIN/GaN superlattices for intersubband transitions

C. Bayram, B. Fain, N. Péré-Laperne, R. Mc-Clintock, M. Razeghi

Research output: Contribution to journalConference article

Abstract

A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AIN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AIN/GaN SL designed for intersubband transition at a telecommunication wavelength of ∼1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.

Original languageEnglish (US)
Article number722212
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7222
DOIs
StatePublished - Mar 24 2009
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices VI - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009

Fingerprint

Indium
Superlattices
Chemical Vapor Deposition
Metallorganic chemical vapor deposition
Silicon
Controllability
Temperature measurement
Surface properties
Telecommunication
metalorganic chemical vapor deposition
superlattices
Absorption
Doping (additives)
Infrared radiation
Wavelength
Surface Quality
Temperature Measurement
controllability
Telecommunications
indium

Keywords

  • AIN/GaN superlattice
  • Intersubband absorption
  • Intersubband transition
  • Metalorganic chemical vapor deposition
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Pulsed metalorganic chemical vapor deposition of high quality AIN/GaN superlattices for intersubband transitions. / Bayram, C.; Fain, B.; Péré-Laperne, N.; Mc-Clintock, R.; Razeghi, M.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7222, 722212, 24.03.2009.

Research output: Contribution to journalConference article

@article{3f3a328214594958b901e2e9d92c55f9,
title = "Pulsed metalorganic chemical vapor deposition of high quality AIN/GaN superlattices for intersubband transitions",
abstract = "A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AIN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AIN/GaN SL designed for intersubband transition at a telecommunication wavelength of ∼1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.",
keywords = "AIN/GaN superlattice, Intersubband absorption, Intersubband transition, Metalorganic chemical vapor deposition, Terahertz",
author = "C. Bayram and B. Fain and N. P{\'e}r{\'e}-Laperne and R. Mc-Clintock and M. Razeghi",
year = "2009",
month = "3",
day = "24",
doi = "10.1117/12.809829",
language = "English (US)",
volume = "7222",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Pulsed metalorganic chemical vapor deposition of high quality AIN/GaN superlattices for intersubband transitions

AU - Bayram, C.

AU - Fain, B.

AU - Péré-Laperne, N.

AU - Mc-Clintock, R.

AU - Razeghi, M.

PY - 2009/3/24

Y1 - 2009/3/24

N2 - A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AIN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AIN/GaN SL designed for intersubband transition at a telecommunication wavelength of ∼1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.

AB - A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AIN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AIN/GaN SL designed for intersubband transition at a telecommunication wavelength of ∼1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.

KW - AIN/GaN superlattice

KW - Intersubband absorption

KW - Intersubband transition

KW - Metalorganic chemical vapor deposition

KW - Terahertz

UR - http://www.scopus.com/inward/record.url?scp=62549095506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62549095506&partnerID=8YFLogxK

U2 - 10.1117/12.809829

DO - 10.1117/12.809829

M3 - Conference article

AN - SCOPUS:62549095506

VL - 7222

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

M1 - 722212

ER -