Pulsed metalorganic chemical vapor deposition of high quality AIN/GaN superlattices for intersubband transitions

C. Bayram, B. Fain, N. Péré-Laperne, R. Mc-Clintock, M. Razeghi

Research output: Contribution to journalConference article

Abstract

A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AIN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AIN/GaN SL designed for intersubband transition at a telecommunication wavelength of ∼1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.

Original languageEnglish (US)
Article number722212
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7222
DOIs
StatePublished - Mar 24 2009
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices VI - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009

Keywords

  • AIN/GaN superlattice
  • Intersubband absorption
  • Intersubband transition
  • Metalorganic chemical vapor deposition
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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