Pulsed Dye Amplification and Frequency Doubling of Single Longitudinal Mode Semiconductor Lasers

A. M. Farkas; J. G. Eden

doi:10.1109/3.259407

Pulsed Dye Amplification and Frequency Doubling of Single Longitudinal Mode Semiconductor Lasers

A. M. Farkas, J. G. Eden

Electrical and Computer Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

A single longitudinal mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd : YAG-pumped dye system by 80 dB, yielding 4 ns (FWHM), infrared pulses having energies of 1.2 mj. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 μJ of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz.

Original language	English (US)
Pages (from-to)	2923-2927
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/3.259407
State	Published - Dec 1993

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.259407

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title = "Pulsed Dye Amplification and Frequency Doubling of Single Longitudinal Mode Semiconductor Lasers",

abstract = "A single longitudinal mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd : YAG-pumped dye system by 80 dB, yielding 4 ns (FWHM), infrared pulses having energies of 1.2 mj. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 μJ of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz.",

author = "Farkas, {A. M.} and Eden, {J. G.}",

note = "Funding Information: Manuscript received October 8, 1992; revised March 8, 1993. This work was supported in part by the National Science Foundation under Grant DMR 89-20538. The authors are with the Everitt Laboratory, University of Illinois, Ur- bana, IL 61801. IEEE Log Number 9213175.",

year = "1993",

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AU - Eden, J. G.

N1 - Funding Information: Manuscript received October 8, 1992; revised March 8, 1993. This work was supported in part by the National Science Foundation under Grant DMR 89-20538. The authors are with the Everitt Laboratory, University of Illinois, Ur- bana, IL 61801. IEEE Log Number 9213175.

PY - 1993/12

Y1 - 1993/12

N2 - A single longitudinal mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd : YAG-pumped dye system by 80 dB, yielding 4 ns (FWHM), infrared pulses having energies of 1.2 mj. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 μJ of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz.

AB - A single longitudinal mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd : YAG-pumped dye system by 80 dB, yielding 4 ns (FWHM), infrared pulses having energies of 1.2 mj. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 μJ of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz.

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Pulsed Dye Amplification and Frequency Doubling of Single Longitudinal Mode Semiconductor Lasers

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