Abstract

We investigate the effect of surface and interior defects such as vacancies and broken bonds on the performance of nano/microelectromechanical (N/MEMS) switches. By combining multiscale electrostatic analysis with mechanical analysis, we compute the capacitance-voltage and pull-in/out voltages of N/MEMS switches in the presence of defects in the dielectric oxide layer. Our results indicate that both surface and interior defects can change the pull-in/out voltages leading to significant voltage offsets. These voltage offsets can lead to an eventual failure of the N/MEMS switch.

Original languageEnglish (US)
Article number073112
JournalApplied Physics Letters
Volume95
Issue number7
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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