TY - GEN
T1 - Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating fT = 765 GHz at 25°C increasing to fT = 845 GHz at -55°C
AU - Snodgrass, William
AU - Hafez, Walid
AU - Harff, Nathan
AU - Feng, Milton
PY - 2006
Y1 - 2006
N2 - Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT = 765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT = 845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density JC = 18.7 mA/μm2 and BVCEO = 1.65 V.
AB - Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT = 765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT = 845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density JC = 18.7 mA/μm2 and BVCEO = 1.65 V.
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U2 - 10.1109/IEDM.2006.346853
DO - 10.1109/IEDM.2006.346853
M3 - Conference contribution
AN - SCOPUS:46049083609
SN - 1424404398
SN - 9781424404391
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2006 International Electron Devices Meeting Technical Digest, IEDM
T2 - 2006 International Electron Devices Meeting, IEDM
Y2 - 10 December 2006 through 13 December 2006
ER -