Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating fT = 765 GHz at 25°C increasing to fT = 845 GHz at -55°C

William Snodgrass, Walid Hafez, Nathan Harff, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT = 765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT = 845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density JC = 18.7 mA/μm2 and BVCEO = 1.65 V.

Original languageEnglish (US)
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
Country/TerritoryUnited States
CitySan Francisco, CA
Period12/10/0612/13/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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