Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap

Tudor D. Stanescu, Philip Phillips

Research output: Contribution to journalArticlepeer-review

Abstract

We show that the strong-coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single-particle spectrum below a characteristic temperature. The pseudogap arises because any singly occupied site not immediately neighboring a hole experiences a maximum energy barrier for transport equal to [Formula presented], [Formula presented] the nearest-neighbor hopping integral and [Formula presented] the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbor. The ubiquity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin.

Original languageEnglish (US)
JournalPhysical review letters
Volume91
Issue number1
DOIs
StatePublished - Jul 2 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott Gap'. Together they form a unique fingerprint.

Cite this