Pseudo-Van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates

Che Yu Liu, Wonsik Choi, Hsien Chih Huang, Jeongdong Kim, Kyooho Jung, Weidong Zhou, Hao Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

N-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

Original languageEnglish (US)
Title of host publication2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580576
DOIs
StatePublished - May 2019
Event2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference2019 Conference on Lasers and Electro-Optics, CLEO 2019
CountryUnited States
CitySan Jose
Period5/5/195/10/19

ASJC Scopus subject areas

  • Spectroscopy
  • Industrial and Manufacturing Engineering
  • Safety, Risk, Reliability and Quality
  • Management, Monitoring, Policy and Law
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Liu, C. Y., Choi, W., Huang, H. C., Kim, J., Jung, K., Zhou, W., Kuo, H. C., & Li, X. (2019). Pseudo-Van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings [8750202] (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/CLEO.2019.8750202