Abstract
n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.
| Original language | English (US) |
|---|---|
| Title of host publication | CLEO |
| Subtitle of host publication | Science and Innovations, CLEO_SI 2019 |
| Publisher | OSA - The Optical Society |
| ISBN (Electronic) | 9781557528209 |
| DOIs | |
| State | Published - Jan 1 2019 |
| Event | CLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States Duration: May 5 2019 → May 10 2019 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| Volume | Part F129-CLEO_SI 2019 |
Conference
| Conference | CLEO: Science and Innovations, CLEO_SI 2019 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 5/5/19 → 5/10/19 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
Cite this
Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. / Liu, Che Yu; Choi, Wonsik; Huang, Hsien Chih; Kim, Jeongdong; Jung, Kyooho; Zhou, Weidong; Kuo, Hao Chung; Li, Xiuling.
CLEO: Science and Innovations, CLEO_SI 2019. OSA - The Optical Society, 2019. (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates
AU - Liu, Che Yu
AU - Choi, Wonsik
AU - Huang, Hsien Chih
AU - Kim, Jeongdong
AU - Jung, Kyooho
AU - Zhou, Weidong
AU - Kuo, Hao Chung
AU - Li, Xiuling
PY - 2019/1/1
Y1 - 2019/1/1
N2 - n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.
AB - n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.
UR - http://www.scopus.com/inward/record.url?scp=85068107340&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068107340&partnerID=8YFLogxK
U2 - 10.1364/CLEO_SI.2019.STh3O.5
DO - 10.1364/CLEO_SI.2019.STh3O.5
M3 - Conference contribution
AN - SCOPUS:85068107340
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - OSA - The Optical Society
ER -