Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates

Che Yu Liu, Wonsik Choi, Hsien Chih Huang, Jeongdong Kim, Kyooho Jung, Weidong Zhou, Hao Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2019
PublisherOSA - The Optical Society
ISBN (Print)9781943580576
DOIs
StatePublished - Jan 1 2019
EventCLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F129-CLEO_SI 2019

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2019
CountryUnited States
CitySan Jose
Period5/5/195/10/19

ASJC Scopus subject areas

  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials

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    Liu, C. Y., Choi, W., Huang, H. C., Kim, J., Jung, K., Zhou, W., Kuo, H. C., & Li, X. (2019). Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. In CLEO: Science and Innovations, CLEO_SI 2019 (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019). OSA - The Optical Society. https://doi.org/10.1364/CLEO_SI.2019.STh3O.5