Abstract
n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.
| Original language | English (US) |
|---|---|
| Title of host publication | CLEO |
| Subtitle of host publication | Science and Innovations, CLEO_SI 2019 |
| Publisher | OSA - The Optical Society |
| ISBN (Print) | 9781943580576 |
| DOIs | |
| State | Published - Jan 1 2019 |
| Event | CLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States Duration: May 5 2019 → May 10 2019 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| Volume | Part F129-CLEO_SI 2019 |
Conference
| Conference | CLEO: Science and Innovations, CLEO_SI 2019 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 5/5/19 → 5/10/19 |
ASJC Scopus subject areas
- Mechanics of Materials
- Electronic, Optical and Magnetic Materials
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Liu, C. Y., Choi, W., Huang, H. C., Kim, J., Jung, K., Zhou, W., Kuo, H. C., & Li, X. (2019). Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. In CLEO: Science and Innovations, CLEO_SI 2019 (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019). OSA - The Optical Society. https://doi.org/10.1364/CLEO_SI.2019.STh3O.5