Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates

Che Yu Liu, Wonsik Choi, Hsien Chih Huang, Jeongdong Kim, Kyooho Jung, Weidong Zhou, Hao Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2019
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
StatePublished - Jan 1 2019
EventCLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F129-CLEO_SI 2019

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2019
CountryUnited States
CitySan Jose
Period5/5/195/10/19

Fingerprint

Epitaxial growth
Monolayers
Diodes
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Cite this

Liu, C. Y., Choi, W., Huang, H. C., Kim, J., Jung, K., Zhou, W., ... Li, X. (2019). Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. In CLEO: Science and Innovations, CLEO_SI 2019 (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019). OSA - The Optical Society. https://doi.org/10.1364/CLEO_SI.2019.STh3O.5

Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. / Liu, Che Yu; Choi, Wonsik; Huang, Hsien Chih; Kim, Jeongdong; Jung, Kyooho; Zhou, Weidong; Kuo, Hao Chung; Li, Xiuling.

CLEO: Science and Innovations, CLEO_SI 2019. OSA - The Optical Society, 2019. (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, CY, Choi, W, Huang, HC, Kim, J, Jung, K, Zhou, W, Kuo, HC & Li, X 2019, Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. in CLEO: Science and Innovations, CLEO_SI 2019. Optics InfoBase Conference Papers, vol. Part F129-CLEO_SI 2019, OSA - The Optical Society, CLEO: Science and Innovations, CLEO_SI 2019, San Jose, United States, 5/5/19. https://doi.org/10.1364/CLEO_SI.2019.STh3O.5
Liu CY, Choi W, Huang HC, Kim J, Jung K, Zhou W et al. Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. In CLEO: Science and Innovations, CLEO_SI 2019. OSA - The Optical Society. 2019. (Optics InfoBase Conference Papers). https://doi.org/10.1364/CLEO_SI.2019.STh3O.5
Liu, Che Yu ; Choi, Wonsik ; Huang, Hsien Chih ; Kim, Jeongdong ; Jung, Kyooho ; Zhou, Weidong ; Kuo, Hao Chung ; Li, Xiuling. / Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates. CLEO: Science and Innovations, CLEO_SI 2019. OSA - The Optical Society, 2019. (Optics InfoBase Conference Papers).
@inproceedings{5f70d765c35c470d81a5946c1eba63d0,
title = "Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates",
abstract = "n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.",
author = "Liu, {Che Yu} and Wonsik Choi and Huang, {Hsien Chih} and Jeongdong Kim and Kyooho Jung and Weidong Zhou and Kuo, {Hao Chung} and Xiuling Li",
year = "2019",
month = "1",
day = "1",
doi = "10.1364/CLEO_SI.2019.STh3O.5",
language = "English (US)",
series = "Optics InfoBase Conference Papers",
publisher = "OSA - The Optical Society",
booktitle = "CLEO",

}

TY - GEN

T1 - Pseudo-van der waals epitaxy of MoS2 on patterned and planar GaN substrates

AU - Liu, Che Yu

AU - Choi, Wonsik

AU - Huang, Hsien Chih

AU - Kim, Jeongdong

AU - Jung, Kyooho

AU - Zhou, Weidong

AU - Kuo, Hao Chung

AU - Li, Xiuling

PY - 2019/1/1

Y1 - 2019/1/1

N2 - n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

AB - n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85068107340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068107340&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2019.STh3O.5

DO - 10.1364/CLEO_SI.2019.STh3O.5

M3 - Conference contribution

AN - SCOPUS:85068107340

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - OSA - The Optical Society

ER -