Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Joseph Sklenar, Yingjie Zhang, Matthias Benjamin Jungfleisch, Youngseok Kim, Yiran Xiao, Gregory MacDougall, Matthew Gilbert, Axel Hoffmann, Peter E Schiffer, Nadya Mason

Research output: Contribution to journalArticlepeer-review

Abstract

Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi2Se3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. By applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (∼6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.

Original languageEnglish (US)
Article number232402
JournalApplied Physics Letters
Volume118
Issue number23
DOIs
StatePublished - Jun 7 2021

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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