TY - JOUR
T1 - Proximity-induced anisotropic magnetoresistance in magnetized topological insulators
AU - Sklenar, Joseph
AU - Zhang, Yingjie
AU - Jungfleisch, Matthias Benjamin
AU - Kim, Youngseok
AU - Xiao, Yiran
AU - MacDougall, Gregory J.
AU - Gilbert, Matthew J.
AU - Hoffmann, Axel
AU - Schiffer, Peter
AU - Mason, Nadya
N1 - Funding Information:
Work at The University of Illinois at Urbana-Champaign was supported by the National Science Foundation MRSEC program under NSF Award No. DMR-1720633. NM acknowledges support from the Army under No. W911NF-20–1-0024. G.J.M and Y.X. acknowledge support from the U.S. Department of Energy under Grant No. DE-SC0012368. Y.Z. acknowledges support from the University of Illinois. Work at Argonne, including YIG thin film growth, was supported by the U.S. Department of Energy, Office of Science, Materials Science and Engineering Division. All authors contributed to the data analysis and manuscript preparation.
Publisher Copyright:
© 2021 Author(s).
PY - 2021/6/7
Y1 - 2021/6/7
N2 - Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi2Se3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. By applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (∼6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.
AB - Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi2Se3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. By applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (∼6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.
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U2 - 10.1063/5.0052301
DO - 10.1063/5.0052301
M3 - Article
AN - SCOPUS:85108005279
SN - 0003-6951
VL - 118
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 232402
ER -