Abstract
We show that proton implantation isolation effectively reduces RF losses for microwave monolithic integrated circuits and that the degree of effectiveness is a function of the induced damage depth. RF losses are mostly due to the current conduction in semiconducting active or buffer layer.
Original language | English (US) |
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Pages (from-to) | 29-31 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 4 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1983 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering