Proton Implantation Isolation for Microwave Monolithic Circuits

R. Esfandiari, M. Feng, H. Kanber

Research output: Contribution to journalArticlepeer-review

Abstract

We show that proton implantation isolation effectively reduces RF losses for microwave monolithic integrated circuits and that the degree of effectiveness is a function of the induced damage depth. RF losses are mostly due to the current conduction in semiconducting active or buffer layer.

Original languageEnglish (US)
Pages (from-to)29-31
Number of pages3
JournalIEEE Electron Device Letters
Volume4
Issue number2
DOIs
StatePublished - Feb 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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