Proton Implantation Isolation for Microwave Monolithic Circuits

R. Esfandiari; M. Feng; H. Kanber

doi:10.1109/EDL.1983.25636

Proton Implantation Isolation for Microwave Monolithic Circuits

R. Esfandiari, M. Feng, H. Kanber

Research output: Contribution to journal › Article › peer-review

Abstract

We show that proton implantation isolation effectively reduces RF losses for microwave monolithic integrated circuits and that the degree of effectiveness is a function of the induced damage depth. RF losses are mostly due to the current conduction in semiconducting active or buffer layer.

Original language	English (US)
Pages (from-to)	29-31
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	4
Issue number	2
DOIs	https://doi.org/10.1109/EDL.1983.25636
State	Published - Feb 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1983.25636

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title = "Proton Implantation Isolation for Microwave Monolithic Circuits",

abstract = "We show that proton implantation isolation effectively reduces RF losses for microwave monolithic integrated circuits and that the degree of effectiveness is a function of the induced damage depth. RF losses are mostly due to the current conduction in semiconducting active or buffer layer.",

author = "R. Esfandiari and M. Feng and H. Kanber",

year = "1983",

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doi = "10.1109/EDL.1983.25636",

language = "English (US)",

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journal = "IEEE Electron Device Letters",

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AU - Feng, M.

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Proton Implantation Isolation for Microwave Monolithic Circuits

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