Protecting wafer surface during plasma ignition using an arsenic cap

M. A. Wistey; S. R. Bank; H. B. Yuen; L. L. Goddard; T. Gugov; J. S. Harris

doi:10.1116/1.1914820

Protecting wafer surface during plasma ignition using an arsenic cap

M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

Dilute nitrides such as GaInNAs are often grown by plasma-assisted molecular-beam epitaxy (MBE), and the plasma that provides reactive nitrogen also damages the semiconductor surface. Direct exposure to the plasma has been studied extensively, but here we report damage due to indirect exposure, while the shutter remains closed. The use of a protective arsenic cap on the wafer is found to prevent such indirect damage, resulting in a 2-3x increase in photoluminescence intensity, sharper features in transmission electron microscopy, and a 30% decrease in laser thresholds. This technique requires no changes to the MBE chamber, unlike a gate valve.

Original language	English (US)
Pages (from-to)	1324-1327
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1914820
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1914820

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title = "Protecting wafer surface during plasma ignition using an arsenic cap",

abstract = "Dilute nitrides such as GaInNAs are often grown by plasma-assisted molecular-beam epitaxy (MBE), and the plasma that provides reactive nitrogen also damages the semiconductor surface. Direct exposure to the plasma has been studied extensively, but here we report damage due to indirect exposure, while the shutter remains closed. The use of a protective arsenic cap on the wafer is found to prevent such indirect damage, resulting in a 2-3x increase in photoluminescence intensity, sharper features in transmission electron microscopy, and a 30% decrease in laser thresholds. This technique requires no changes to the MBE chamber, unlike a gate valve.",

author = "Wistey, {M. A.} and Bank, {S. R.} and Yuen, {H. B.} and Goddard, {L. L.} and T. Gugov and Harris, {J. S.}",

note = "Funding Information: The authors would like to thank Professor Mark Cappelli of Stanford University for helpful discussions, and Charles Evans Associates for SIMS and NRA-RBS assistance. This work was supported under DARPA and ARO contracts MDA972-00-1-024, DAAD17-02-C-0101, and DAAD199-02-1-0184, ONR contract N00014-01-1-00100, as well as the Stanford Network Research Center (SNRC) and a graduate fellowship from the National Science Foundation.",

year = "2005",

doi = "10.1116/1.1914820",

language = "English (US)",

volume = "23",

pages = "1324--1327",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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T1 - Protecting wafer surface during plasma ignition using an arsenic cap

AU - Wistey, M. A.

AU - Bank, S. R.

AU - Yuen, H. B.

AU - Goddard, L. L.

AU - Gugov, T.

AU - Harris, J. S.

N1 - Funding Information: The authors would like to thank Professor Mark Cappelli of Stanford University for helpful discussions, and Charles Evans Associates for SIMS and NRA-RBS assistance. This work was supported under DARPA and ARO contracts MDA972-00-1-024, DAAD17-02-C-0101, and DAAD199-02-1-0184, ONR contract N00014-01-1-00100, as well as the Stanford Network Research Center (SNRC) and a graduate fellowship from the National Science Foundation.

PY - 2005

Y1 - 2005

N2 - Dilute nitrides such as GaInNAs are often grown by plasma-assisted molecular-beam epitaxy (MBE), and the plasma that provides reactive nitrogen also damages the semiconductor surface. Direct exposure to the plasma has been studied extensively, but here we report damage due to indirect exposure, while the shutter remains closed. The use of a protective arsenic cap on the wafer is found to prevent such indirect damage, resulting in a 2-3x increase in photoluminescence intensity, sharper features in transmission electron microscopy, and a 30% decrease in laser thresholds. This technique requires no changes to the MBE chamber, unlike a gate valve.

AB - Dilute nitrides such as GaInNAs are often grown by plasma-assisted molecular-beam epitaxy (MBE), and the plasma that provides reactive nitrogen also damages the semiconductor surface. Direct exposure to the plasma has been studied extensively, but here we report damage due to indirect exposure, while the shutter remains closed. The use of a protective arsenic cap on the wafer is found to prevent such indirect damage, resulting in a 2-3x increase in photoluminescence intensity, sharper features in transmission electron microscopy, and a 30% decrease in laser thresholds. This technique requires no changes to the MBE chamber, unlike a gate valve.

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Protecting wafer surface during plasma ignition using an arsenic cap

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