Protecting wafer surface during plasma ignition using an arsenic cap

M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, J. S. Harris

Research output: Contribution to journalArticle

Abstract

Dilute nitrides such as GaInNAs are often grown by plasma-assisted molecular-beam epitaxy (MBE), and the plasma that provides reactive nitrogen also damages the semiconductor surface. Direct exposure to the plasma has been studied extensively, but here we report damage due to indirect exposure, while the shutter remains closed. The use of a protective arsenic cap on the wafer is found to prevent such indirect damage, resulting in a 2-3x increase in photoluminescence intensity, sharper features in transmission electron microscopy, and a 30% decrease in laser thresholds. This technique requires no changes to the MBE chamber, unlike a gate valve.

Original languageEnglish (US)
Pages (from-to)1324-1327
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
StatePublished - Dec 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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