Proposal for an ultra-compact electron transfer modulator structure

J. Wang, J. P. Leburton, J. E. Zucke

Research output: Contribution to journalArticlepeer-review

Abstract

A theoretical model is presented for the current-voltage characteristics of an InGaAs/InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson-Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.

Original languageEnglish (US)
Pages (from-to)1293-1295
Number of pages3
JournalElectronics Letters
Volume29
Issue number14
DOIs
StatePublished - Jul 1993

Keywords

  • Optical modulation
  • Semiconductor quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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