Proposal for an ultra-compact electron transfer modulator structure

J. Wang; J. P. Leburton; J. E. Zucke

doi:10.1049/el:19930863

Proposal for an ultra-compact electron transfer modulator structure

J. Wang, J. P. Leburton, J. E. Zucke

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A theoretical model is presented for the current-voltage characteristics of an InGaAs/InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson-Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.

Original language	English (US)
Pages (from-to)	1293-1295
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	14
DOIs	https://doi.org/10.1049/el:19930863
State	Published - Jul 1993

Keywords

Optical modulation
Semiconductor quantum wells

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19930863

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@article{23acadf839cf4514bafd3b989cbd4b2a,

title = "Proposal for an ultra-compact electron transfer modulator structure",

abstract = "A theoretical model is presented for the current-voltage characteristics of an InGaAs/InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson-Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.",

keywords = "Optical modulation, Semiconductor quantum wells",

author = "J. Wang and Leburton, {J. P.} and Zucke, {J. E.}",

year = "1993",

month = jul,

doi = "10.1049/el:19930863",

language = "English (US)",

volume = "29",

pages = "1293--1295",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons, Ltd.",

number = "14",

}

TY - JOUR

T1 - Proposal for an ultra-compact electron transfer modulator structure

AU - Wang, J.

AU - Leburton, J. P.

AU - Zucke, J. E.

PY - 1993/7

Y1 - 1993/7

N2 - A theoretical model is presented for the current-voltage characteristics of an InGaAs/InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson-Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.

AB - A theoretical model is presented for the current-voltage characteristics of an InGaAs/InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson-Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.

KW - Optical modulation

KW - Semiconductor quantum wells

UR - http://www.scopus.com/inward/record.url?scp=0027912036&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027912036&partnerID=8YFLogxK

U2 - 10.1049/el:19930863

DO - 10.1049/el:19930863

M3 - Article

AN - SCOPUS:0027912036

SN - 0013-5194

VL - 29

SP - 1293

EP - 1295

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Proposal for an ultra-compact electron transfer modulator structure

Abstract

Keywords

ASJC Scopus subject areas

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