Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach

Baozeng Guo; Umberto Ravaioli; Dengyuan Song

doi:10.1016/j.mejo.2003.10.007

Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach

Baozeng Guo
, Umberto Ravaioli
, Dengyuan Song

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of a GaN Metal-Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate-source voltage (V_GS) and drain-source voltage (V _DS) were obtained, then the characteristics of the drain current (I_DS) versus the drain-source voltage (V_DS) and the transconductance (G_m) versus V_GS characteristics were determined. At V_DS=15V and V_GS=0V, I_DS is 5.03 A/cm, which is higher value. The G_m-V_GS curve shows bell shaped and the maximum G_m is 112 ms/mm at V_DS=15V and V_GS=1.5V. The current gain cutoff frequency (f_T) is 98GHz at V_DS=15V and V_GS=0V.

Original language	English (US)
Pages (from-to)	117-123
Number of pages	7
Journal	Microelectronics Journal
Volume	35
Issue number	2
DOIs	https://doi.org/10.1016/j.mejo.2003.10.007
State	Published - Feb 2004

Keywords

Gallium nitride
Metal-semiconductor field effect transistor
Monte carlo simulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Online availability

10.1016/j.mejo.2003.10.007

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title = "Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach",

abstract = "The properties of a GaN Metal-Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate-source voltage (VGS) and drain-source voltage (V DS) were obtained, then the characteristics of the drain current (IDS) versus the drain-source voltage (VDS) and the transconductance (Gm) versus VGS characteristics were determined. At VDS=15V and VGS=0V, IDS is 5.03 A/cm, which is higher value. The Gm-VGS curve shows bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency (fT) is 98GHz at VDS=15V and VGS=0V.",

keywords = "Gallium nitride, Metal-semiconductor field effect transistor, Monte carlo simulation",

author = "Baozeng Guo and Umberto Ravaioli and Dengyuan Song",

year = "2004",

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doi = "10.1016/j.mejo.2003.10.007",

language = "English (US)",

volume = "35",

pages = "117--123",

journal = "Microelectronics Journal",

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TY - JOUR

T1 - Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach

AU - Guo, Baozeng

AU - Ravaioli, Umberto

AU - Song, Dengyuan

PY - 2004/2

Y1 - 2004/2

N2 - The properties of a GaN Metal-Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate-source voltage (VGS) and drain-source voltage (V DS) were obtained, then the characteristics of the drain current (IDS) versus the drain-source voltage (VDS) and the transconductance (Gm) versus VGS characteristics were determined. At VDS=15V and VGS=0V, IDS is 5.03 A/cm, which is higher value. The Gm-VGS curve shows bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency (fT) is 98GHz at VDS=15V and VGS=0V.

AB - The properties of a GaN Metal-Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate-source voltage (VGS) and drain-source voltage (V DS) were obtained, then the characteristics of the drain current (IDS) versus the drain-source voltage (VDS) and the transconductance (Gm) versus VGS characteristics were determined. At VDS=15V and VGS=0V, IDS is 5.03 A/cm, which is higher value. The Gm-VGS curve shows bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency (fT) is 98GHz at VDS=15V and VGS=0V.

KW - Gallium nitride

KW - Metal-semiconductor field effect transistor

KW - Monte carlo simulation

UR - https://www.scopus.com/pages/publications/0347354873

UR - https://www.scopus.com/pages/publications/0347354873#tab=citedBy

U2 - 10.1016/j.mejo.2003.10.007

DO - 10.1016/j.mejo.2003.10.007

M3 - Article

AN - SCOPUS:0347354873

SN - 0026-2692

VL - 35

SP - 117

EP - 123

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 2

ER -

Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach

Abstract

Keywords

ASJC Scopus subject areas

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