Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach

Baozeng Guo, Umberto Ravaioli, Dengyuan Song

Research output: Contribution to journalArticle

Abstract

The properties of a GaN Metal-Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate-source voltage (VGS) and drain-source voltage (V DS) were obtained, then the characteristics of the drain current (IDS) versus the drain-source voltage (VDS) and the transconductance (Gm) versus VGS characteristics were determined. At VDS=15V and VGS=0V, IDS is 5.03 A/cm, which is higher value. The Gm-VGS curve shows bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency (fT) is 98GHz at VDS=15V and VGS=0V.

Original languageEnglish (US)
Pages (from-to)117-123
Number of pages7
JournalMicroelectronics Journal
Volume35
Issue number2
DOIs
StatePublished - Feb 1 2004

Keywords

  • Gallium nitride
  • Metal-semiconductor field effect transistor
  • Monte carlo simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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