TY - GEN
T1 - Properties of oxidized porous silicon as insulator material for RF applications
AU - Molinero, D.
AU - Valera, E.
AU - Lázaro, A.
AU - Girbau, D.
AU - Rodriguez, A.
AU - Pradell, L.
AU - Alcubilla, R.
PY - 2005
Y1 - 2005
N2 - In this paper we present a method for developing thick layers of silicon oxide. This work is divided into two parts. First we present the fabrication of the dielectric layer using porous silicon technology. In the second part we show the characterization of coplanar transmission lines deposited on it. In order to form the oxide layer, an electrochemical etching in hydrofluoric acid is used to form microporous silicon. Next, several oxidations steps are used to oxidize the porous silicon (OPS) until the final thick oxide layer is obtained. In order to characterize the oxide layer simple coplanar lines were fabricated. Material parameters were extracted from scattering parameters measured with a network analyzer. Experimental results of oxidized porous silicon layer show good properties and can be used as a thick dielectric material, taking the place to other fabrication methods as flame hydrolysis deposition (FHD) and . chemical vapor deposition (CVD) techniques.
AB - In this paper we present a method for developing thick layers of silicon oxide. This work is divided into two parts. First we present the fabrication of the dielectric layer using porous silicon technology. In the second part we show the characterization of coplanar transmission lines deposited on it. In order to form the oxide layer, an electrochemical etching in hydrofluoric acid is used to form microporous silicon. Next, several oxidations steps are used to oxidize the porous silicon (OPS) until the final thick oxide layer is obtained. In order to characterize the oxide layer simple coplanar lines were fabricated. Material parameters were extracted from scattering parameters measured with a network analyzer. Experimental results of oxidized porous silicon layer show good properties and can be used as a thick dielectric material, taking the place to other fabrication methods as flame hydrolysis deposition (FHD) and . chemical vapor deposition (CVD) techniques.
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U2 - 10.1109/SCED.2005.1504329
DO - 10.1109/SCED.2005.1504329
M3 - Conference contribution
AN - SCOPUS:33745711903
SN - 0780388100
SN - 9780780388109
T3 - 2005 Spanish Conference on Electron Devices, Proceedings
SP - 131
EP - 133
BT - 2005 Spanish Conference on Electron Devices, Proceedings
T2 - 2005 Spanish Conference on Electron Devices
Y2 - 2 February 2005 through 4 February 2005
ER -