@inproceedings{60973f5c6a2d4757b366006ee38ac46e,
title = "Properties of metamorphic materials and device structures on GaAs substrates",
abstract = "In this work, the structural, optical, and electrical properties of metamorphic films are examined and compared to non-metamorphic films. Results for electrical and optical devices are presented. Finally the reliability of metamorphic HEMTs is examined.",
author = "Hoke, {W. E.} and Kennedy, {T. D.} and A. Torabi and Whelan, {C. S.} and Marsh, {P. F.} and Leoni, {R. E.} and Jang, {J. H.} and I. Adesida and Chang, {K. L.} and Hsieh, {K. C.}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",
year = "2002",
doi = "10.1109/MBE.2002.1037763",
language = "English (US)",
series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "69--70",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
address = "United States",
}