Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers

F. A. Kish, J. Caracci, N. Holonyak, K. C. Hsieh, J. E. Baker, S. A. Maranowski, A. R. Sugg, J. M. Dallesasse, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

Research output: Contribution to journalArticle

Abstract

Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a "wet" ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in a N2 carrier gas) at elevated temperatures (≥500° C) and results in stable transparent oxides. Secondary ion mass spectrometry (SIMS) as well as scanning and transmission electron microscopy (SEM and TEM) are employed to evaluate the oxide properties, composition, and oxide-semiconductor interface. The properties of native oxides of the In0.5(AlxGa1-x)0.5P system are compared to those of the AlxGa1-xAs system. Possible reaction mechanisms and oxidation kinetics are considered. The In0.5(AlxGa1-x)0.5P native oxide is shown to be of sufficient quality to be employed in the fabrication of stripe-geometry In0.5(AlxGa1-x)0.5P visible-spectrum laser diodes.

Original languageEnglish (US)
Pages (from-to)1133-1139
Number of pages7
JournalJournal of Electronic Materials
Volume21
Issue number12
DOIs
StatePublished - Dec 1 1992

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Keywords

  • Albearing III-V oxides
  • III-V "wet" oxidation
  • III-V native oxides
  • In(Al.Ga)P, AlGaAs, native oxides
  • oxide-defined heterostructure lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kish, F. A., Caracci, J., Holonyak, N., Hsieh, K. C., Baker, J. E., Maranowski, S. A., Sugg, A. R., Dallesasse, J. M., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., & Craford, M. G. (1992). Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers. Journal of Electronic Materials, 21(12), 1133-1139. https://doi.org/10.1007/BF02667606