Projecting lifetime of deep submicron MOSFETs

Erhong Li, Elyse Rosenbaum, Jiang Tao, Peng Fang

Research output: Contribution to journalArticle

Abstract

A detailed examination of hot-carrier-induced degradation in MOSFETs from a 0.25-μm and a 0.1-μm technology is performed. Although the worst case stress condition depends on the stress voltage, channel length, and oxide thickness, I b,peak is projected to be the worst case stress condition at the operating voltage for both nMOSFETs and pMOSFETs. Post-metallization anneal (PMA) in Deuterium can significantly improve the device lifetime if the primary degradation mechanism at the stress condition is interface trap generation due to interface depassivation by energetic electrons.

Original languageEnglish (US)
Pages (from-to)671-678
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume48
Issue number4
DOIs
StatePublished - Apr 1 2001

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Degradation
Hot carriers
Deuterium
Electric potential
Metallizing
Oxides
Electrons

Keywords

  • Hot-carrier-induced degradation
  • Worst case stress condition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Projecting lifetime of deep submicron MOSFETs. / Li, Erhong; Rosenbaum, Elyse; Tao, Jiang; Fang, Peng.

In: IEEE Transactions on Electron Devices, Vol. 48, No. 4, 01.04.2001, p. 671-678.

Research output: Contribution to journalArticle

Li, Erhong ; Rosenbaum, Elyse ; Tao, Jiang ; Fang, Peng. / Projecting lifetime of deep submicron MOSFETs. In: IEEE Transactions on Electron Devices. 2001 ; Vol. 48, No. 4. pp. 671-678.
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