Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers

S. R. Bank; M. A. Wistey; H. B. Yuen; L. L. Goddard; J. S. Harris

Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a CW 1.5 μm GaInNAsSb laser with threshold current density of 1.06 kA/cm², characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.

Original language	English (US)
Pages (from-to)	756-758
Number of pages	3
Journal	OSA Trends in Optics and Photonics Series
Volume	95 A
State	Published - Jan 1 2004
Externally published	Yes
Event	Optical Fiber Communucation Conference (OFC), Postconference Digest - Washington, DC, United States Duration: Feb 23 2004 → Feb 25 2004

ASJC Scopus subject areas

Engineering(all)

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title = "Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers",

abstract = "We present a CW 1.5 μm GaInNAsSb laser with threshold current density of 1.06 kA/cm2, characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.",

author = "Bank, {S. R.} and Wistey, {M. A.} and Yuen, {H. B.} and Goddard, {L. L.} and Harris, {J. S.}",

year = "2004",

month = jan,

day = "1",

language = "English (US)",

volume = "95 A",

pages = "756--758",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Optical Fiber Communucation Conference (OFC), Postconference Digest ; Conference date: 23-02-2004 Through 25-02-2004",

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TY - JOUR

T1 - Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers

AU - Bank, S. R.

AU - Wistey, M. A.

AU - Yuen, H. B.

AU - Goddard, L. L.

AU - Harris, J. S.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We present a CW 1.5 μm GaInNAsSb laser with threshold current density of 1.06 kA/cm2, characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.

AB - We present a CW 1.5 μm GaInNAsSb laser with threshold current density of 1.06 kA/cm2, characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.

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UR - http://www.scopus.com/inward/citedby.url?scp=8744221500&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:8744221500

VL - 95 A

SP - 756

EP - 758

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

SN - 1094-5695

T2 - Optical Fiber Communucation Conference (OFC), Postconference Digest

Y2 - 23 February 2004 through 25 February 2004

ER -

Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers

Abstract

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