Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers

S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Contribution to journalConference articlepeer-review

Abstract

We present a CW 1.5 μm GaInNAsSb laser with threshold current density of 1.06 kA/cm2, characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.

Original languageEnglish (US)
Pages (from-to)756-758
Number of pages3
JournalOSA Trends in Optics and Photonics Series
Volume95 A
StatePublished - Jan 1 2004
Externally publishedYes
EventOptical Fiber Communucation Conference (OFC), Postconference Digest - Washington, DC, United States
Duration: Feb 23 2004Feb 25 2004

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Progress towards high power 1.5 μm GaInNAsSb/GaAs lasers for Raman amplifiers'. Together they form a unique fingerprint.

Cite this