TY - GEN
T1 - Progress on the transistor-injected quantum-cascade laser
AU - Dallesasse, John M.
AU - Chen, Kanuo
AU - Hsiao, Fu Chen
N1 - Funding Information:
This work is supported in part by the National Science Foundation, Award No. ECCS 1408300. The authors would also like to acknowledge financial support from Northrop Grumman Corporation and the donation of epitaxial material for the GaAs-based devices from Quantum Electro Opto Systems Sdn. Bhd. Finally, the authors would like to thank Professors Jean-Pierre Leburton, Milton Feng, and Nick Holonyak, Jr. for helpful discussions.
Publisher Copyright:
© 2018 SPIE.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - Progress on the modeling, fabrication, and characterization of the transistor-injected quantum-cascade laser (TI-QCL) is presented. As a novel variant of the quantum cascade laser, the TI-QCL has been projected to have advantages over conventional QCLs in certain applications because of its 3-terminal nature. The separation of field and current is expected to allow separate amplitude and frequency modulation, and the location of the cascade structure in a p-n junction depletion region is expected to reduce free carrier absorption and improve efficiency. At the same time, the added complexity of the structure creates challenges in the realization of working devices. An overview of the basic operating principles of the TI-QCL is first given, and projected advantages discussed. Next, work on modeling GaAsbased TI-QCLs is presented, and a design for devices in this system is presented. Finally, work on fabrication and characterization of devices is examined and ongoing challenges are discussed. The role of quantum state alignment in the QCL region on electron-hole recombination in the base is also examined, showing the capability of using basecollector voltage to modulate the optical output from the direct-bandgap transistor base.
AB - Progress on the modeling, fabrication, and characterization of the transistor-injected quantum-cascade laser (TI-QCL) is presented. As a novel variant of the quantum cascade laser, the TI-QCL has been projected to have advantages over conventional QCLs in certain applications because of its 3-terminal nature. The separation of field and current is expected to allow separate amplitude and frequency modulation, and the location of the cascade structure in a p-n junction depletion region is expected to reduce free carrier absorption and improve efficiency. At the same time, the added complexity of the structure creates challenges in the realization of working devices. An overview of the basic operating principles of the TI-QCL is first given, and projected advantages discussed. Next, work on modeling GaAsbased TI-QCLs is presented, and a design for devices in this system is presented. Finally, work on fabrication and characterization of devices is examined and ongoing challenges are discussed. The role of quantum state alignment in the QCL region on electron-hole recombination in the base is also examined, showing the capability of using basecollector voltage to modulate the optical output from the direct-bandgap transistor base.
KW - Transistor-injected quantum cascade laser
KW - light-emitting transistor
KW - quantum cascade laser
KW - transistor laser
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U2 - 10.1117/12.2282476
DO - 10.1117/12.2282476
M3 - Conference contribution
AN - SCOPUS:85050246319
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Quantum Sensing and Nano Electronics and Photonics XV
A2 - Leo, Giuseppe
A2 - Brown, Gail J.
A2 - Razeghi, Manijeh
A2 - Lewis, Jay S.
PB - SPIE
T2 - Quantum Sensing and Nano Electronics and Photonics XV 2018
Y2 - 28 January 2018 through 2 February 2018
ER -