Abstract
The flexibility of broad-beam ion processing when used in conjunction with a chemistry assist technique is demonstrated. In this technique called chemically-assisted ion-beam etching (CAIBE), a chemically reactive gas is introduced into the sample chamber independent of a broad-beam of inert or reactive ions. This allows for a wide range of independent control of the chemical and ionic fluxes not available in other dry etching techniques. Using a two-component gas system of argon and xenon difluoride vapor under various operating conditions, the etched wall profiles of Si were found to be controllable. In addition, etch rates on various refractory metals and metal silicides using CAIBE with Cl//2 as the reactive background gas in the presence of Ar** plus ion bombardment are presented.
| Original language | English (US) |
|---|---|
| Pages | 123-129 |
| Number of pages | 7 |
| Volume | 27 |
| No | 5 |
| Specialist publication | Solid State Technology |
| State | Published - 1984 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry