Profile control by chemically assisted ion-beam and reactive ion beam etching

Keyphrases

• Argon 25%
• Argon Ions 25%
• Beam Ions 100%
• Beam Mechanism 25%
• Broad Beam 50%
• Chemical Etching 25%
• Energy Current 25%
• Etching Mechanism 25%
• Fluorinated 25%
• Gas System 25%
• Ion Beam 100%
• Ion Energy 25%
• Ion Etching 25%
• Ion-assisted Etching 25%
• Low Partial Pressure 25%
• On-sight 25%
• Partial Pressure 50%
• Physical Etching 25%
• Profile Control 100%
• Reactive Ion Beam Etching 100%
• Reactive Ions 25%
• Sub-micrometer 25%
• Two-component Gas 25%
• Vertical Profile 25%
• XeF2 100%
• Xenon Difluoride 25%

Engineering

• Ambient (Background) 33%
• Component Gas 33%
• Ion Energy 33%
• Partial Pressure 100%
• Profile Control 100%