Processing techniques for silicon-based transient devices

Xian Huang (Inventor), Sukwon Hwang (Inventor), John A Rogers (Inventor)

Research output: Patent


Provided are methods of making a transient electronic device by fabricating one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components supported by a mother substrate. The components may independently comprise a selectively transformable material and, optionally, further have a preselected transience profile. The components are transfer printed, thereby decoupling the component fabrication step from additional processing to provide desired device functionality and transient properties. A substrate layer is provided on top of the components and used to facilitate handling, processing, and/or device functionality.
Original languageEnglish (US)
U.S. patent number9875974
StatePublished - Jan 23 2018


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