Abstract
It is critical to be able to develop GaN power devices with highly crystalline materials to reduce leakage currents that negatively impact performance. Silicon Nitride Shadowed, Selective Area Growth (SNS-SAG) as enabled by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) is employed as a method of producing low leakage power devices. Also utilized is an edge termination scheme that is uniquely possible by the SNS-SAG method.
Original language | English (US) |
---|---|
Pages | 355-358 |
Number of pages | 4 |
State | Published - 2022 |
Externally published | Yes |
Event | 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States Duration: May 9 2022 → May 12 2022 |
Conference
Conference | 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 |
---|---|
Country/Territory | United States |
City | Monterey |
Period | 5/9/22 → 5/12/22 |
Keywords
- GaN
- PAMBE
- Power Devices
- Selective Area Growth
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering