Processing of Vertical GaN Power Device via Silicon Nitride Shadowed Selective Area Growth

Frank P. Kelly, Matthew M. Landi, Kyekyoon Kim

Research output: Contribution to conferencePaperpeer-review

Abstract

It is critical to be able to develop GaN power devices with highly crystalline materials to reduce leakage currents that negatively impact performance. Silicon Nitride Shadowed, Selective Area Growth (SNS-SAG) as enabled by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) is employed as a method of producing low leakage power devices. Also utilized is an edge termination scheme that is uniquely possible by the SNS-SAG method.

Original languageEnglish (US)
Pages355-358
Number of pages4
StatePublished - 2022
Externally publishedYes
Event2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States
Duration: May 9 2022May 12 2022

Conference

Conference2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022
Country/TerritoryUnited States
CityMonterey
Period5/9/225/12/22

Keywords

  • GaN
  • PAMBE
  • Power Devices
  • Selective Area Growth

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Processing of Vertical GaN Power Device via Silicon Nitride Shadowed Selective Area Growth'. Together they form a unique fingerprint.

Cite this