@inproceedings{72b0645f60d44300afb7dd20bf13e8bd,
title = "Processes and device technologies for AlGaN/GaN high electron mobility transistors",
abstract = "The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.",
author = "I. Adesida and V. Kumar and F. Mohammed and L. Wang and A. Basu and Kim, {D. H.} and W. Lanford",
year = "2006",
doi = "10.1109/IEDM.2006.346797",
language = "English (US)",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}