TY - JOUR
T1 - Process Optimization and Microwave Model of GaAs Photodiodes for 50 Gb/s Optical Links
AU - Wu, Dufei
AU - Peng, Yu Ting
AU - Yu, Xin
AU - Feng, Milton
N1 - Manuscript received July 10, 2020; revised August 6, 2020; accepted August 10, 2020. Date of publication August 19, 2020; date of current version October 29, 2020. This work was supported in part by Compound Semiconductor Manufacturing Technology (2020); in part by Mr. Sidney Lu of Foxconn Interconnect Technology; in part by the National Science Foundation under Grant 1640196; in part by the Nanoelectronics Research Corporation (NERC); and in part by the Semiconductor Research Corporation (SRC) under Research Task ID 2697.001. (Corresponding author: Dufei Wu.) Dufei Wu, Yu-Ting Peng, and Milton Feng are with the Department of Electrical and Computer Engineering, Microelectronics and Nanotechnology Laboratory, University of Illinois at Urbana–Champaign, Urbana, IL 61801 USA (e-mail: [email protected]; [email protected]; [email protected]).
PY - 2020/11
Y1 - 2020/11
N2 - GaAs photodiode is a critical O/E receiver component for high-speed optical link in data centers and HPC. In this work, GaAs P-i-N photodiodes with four different aperture diameters are developed for 50 Gb/s data detection. Device layer structure and the fabrication process are optimized to achieve low dark current, high responsivity and high bandwidth. An O/E microwave model based on the device physics and structure is developed and the simulated frequency responses agree well with the measurements. The 50 Gb/s NRZ eye-diagrams of optical link test are validated via the use of 20 and $25~{\mu }{m}$ diameter photodiodes and a 29 GHz 850 nm oxide VCSEL.
AB - GaAs photodiode is a critical O/E receiver component for high-speed optical link in data centers and HPC. In this work, GaAs P-i-N photodiodes with four different aperture diameters are developed for 50 Gb/s data detection. Device layer structure and the fabrication process are optimized to achieve low dark current, high responsivity and high bandwidth. An O/E microwave model based on the device physics and structure is developed and the simulated frequency responses agree well with the measurements. The 50 Gb/s NRZ eye-diagrams of optical link test are validated via the use of 20 and $25~{\mu }{m}$ diameter photodiodes and a 29 GHz 850 nm oxide VCSEL.
KW - Photodiodes
KW - microwave measurements
KW - optical device fabrication
KW - optical interconnections
KW - semiconductor device modeling
UR - https://www.scopus.com/pages/publications/85096031388
UR - https://www.scopus.com/pages/publications/85096031388#tab=citedBy
U2 - 10.1109/TSM.2020.3016612
DO - 10.1109/TSM.2020.3016612
M3 - Article
AN - SCOPUS:85096031388
SN - 0894-6507
VL - 33
SP - 557
EP - 563
JO - IEEE Transactions on Semiconductor Manufacturing
JF - IEEE Transactions on Semiconductor Manufacturing
IS - 4
M1 - 9171327
ER -