Process Optimization and Microwave Model of GaAs Photodiodes for 50 Gb/s Optical Links

Dufei Wu, Yu Ting Peng, Xin Yu, Milton Feng

Research output: Contribution to journalArticlepeer-review


GaAs photodiode is a critical O/E receiver component for high-speed optical link in data centers and HPC. In this work, GaAs P-i-N photodiodes with four different aperture diameters are developed for 50 Gb/s data detection. Device layer structure and the fabrication process are optimized to achieve low dark current, high responsivity and high bandwidth. An O/E microwave model based on the device physics and structure is developed and the simulated frequency responses agree well with the measurements. The 50 Gb/s NRZ eye-diagrams of optical link test are validated via the use of 20 and $25~{\mu }{m}$ diameter photodiodes and a 29 GHz 850 nm oxide VCSEL.

Original languageEnglish (US)
Article number9171327
Pages (from-to)557-563
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Issue number4
StatePublished - Nov 2020
Externally publishedYes


  • Photodiodes
  • microwave measurements
  • optical device fabrication
  • optical interconnections
  • semiconductor device modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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