Abstract
GaAs photodiode is a critical O/E receiver component for high-speed optical link in data centers and HPC. In this work, GaAs P-i-N photodiodes with four different aperture diameters are developed for 50 Gb/s data detection. Device layer structure and the fabrication process are optimized to achieve low dark current, high responsivity and high bandwidth. An O/E microwave model based on the device physics and structure is developed and the simulated frequency responses agree well with the measurements. The 50 Gb/s NRZ eye-diagrams of optical link test are validated via the use of 20 and $25~{\mu }{m}$ diameter photodiodes and a 29 GHz 850 nm oxide VCSEL.
| Original language | English (US) |
|---|---|
| Article number | 9171327 |
| Pages (from-to) | 557-563 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Semiconductor Manufacturing |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| State | Published - Nov 2020 |
| Externally published | Yes |
Keywords
- Photodiodes
- microwave measurements
- optical device fabrication
- optical interconnections
- semiconductor device modeling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering