Process optimization and characterization of 25 GHz bandwidth 850 nm P-i-N photodetector for 50 Gb/s optical links

Yu Ting Peng, Ardy Winoto, Dufei Wu, Milton Feng

Research output: Contribution to conferencePaper

Abstract

GaAs P-i-N photodetector has been fabricated and characterized to act as receivers in 50 Gb/s optical links. The fabricated photodetector with a 20 um mesa diameter has shown to achieve 26 GHz bandwidth with dark current less than 1 nA from room temperature to 85°C operation.

Original languageEnglish (US)
StatePublished - Jan 1 2018
Event2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States
Duration: May 7 2018May 10 2018

Other

Other2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
CountryUnited States
CityAustin
Period5/7/185/10/18

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Keywords

  • Bandwidth
  • Dark Current
  • Optical Links
  • P-i-N Photodetector

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Peng, Y. T., Winoto, A., Wu, D., & Feng, M. (2018). Process optimization and characterization of 25 GHz bandwidth 850 nm P-i-N photodetector for 50 Gb/s optical links. Paper presented at 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Austin, United States.