Process induced stresses in cavity SOI wafers

Keyphrases

• After High Temperature 50%
• Bonded Wafer 50%
• Buried Cavities 50%
• Cavity Geometry 50%
• Cavity-SOI 100%
• Double Gate 50%
• Etched Silicon 50%
• High-temperature Annealing 50%
• Infrared Polariscope 50%
• MEMS-based 50%
• MOS Devices 50%
• Oxidation Mechanism 50%
• Process-induced Stress 100%
• Recent Applications 50%
• Reliability Issues 50%
• Residual Stress 100%
• Residual Stress State 50%
• Resonator 50%
• Silicon Cavity 50%
• Silicon-on-insulator Wafer 50%
• SOI Wafer 100%
• Stress Concentration 50%
• Tensile Stress 50%
• Wafer 50%
• Wafer Thinning 50%

Material Science

• Annealing 33%
• Microelectromechanical System 33%
• Oxidation Reaction 33%
• Residual Stress 100%
• Resonator 33%
• Silicon 66%
• Stress Concentration 33%
• Ultimate Tensile Strength 33%