Process induced stresses in cavity SOI wafers

O. Elkhatib, J. Makinen, M. Palokangas, T. W. Lin, H. T. Johnson, G. P. Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Silicon-on-insulator wafers with buried cavities have been utilized in recent applications ranging from MEMS based resonator devices to double gate MOS devices. The objective of this study is to determine whether the magnitude and orientation of residual stress concentrations generated by the etched silicon cavities, which can introduce reliability issues for these devices, particularly if a large tensile stress results from this processing. The results of this study show that the residual stress state of the bonded wafers may be tensile or compressive and the magnitude and orientation of these stresses depend on both the etched cavity geometry and the oxidation process, which can be verified in the development phase with an infrared polariscope. There is evidence that the stress in the handle wafer prior to bonding is maintained even after high temperature annealing and wafer thinning. Thus, residual stresses may be controllable prior to bonding.

Original languageEnglish (US)
Title of host publicationSemiconductor Wafer Bonding 11
Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
PublisherElectrochemical Society Inc.
Number of pages10
ISBN (Electronic)9781607681731
ISBN (Print)9781566778237
StatePublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)


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