@inproceedings{0420326ebd0146469c029f8b1a051358,
title = "Process development and characteristics of nano III-V MOSFET",
abstract = "The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high interface density of states between gate dielectric and channels by applying an interface-control-layer. The proposed design and results show promise for realizing compound semiconductor based MOSFETs.",
keywords = "Aluminum oxide, Epitaxy, III-V MOSFETs",
author = "Donald Cheng and Chichih Liao and Cheng, {K. Y.} and Milton Feng",
year = "2008",
language = "English (US)",
isbn = "1893580113",
series = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
booktitle = "2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008",
note = "23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 ; Conference date: 14-04-2008 Through 17-04-2008",
}