Process development and characteristics of nano III-V MOSFET

Donald Cheng, Chichih Liao, K. Y. Cheng, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high interface density of states between gate dielectric and channels by applying an interface-control-layer. The proposed design and results show promise for realizing compound semiconductor based MOSFETs.

Original languageEnglish (US)
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
StatePublished - Dec 1 2008
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Other

Other23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Country/TerritoryUnited States
CityChicago, IL
Period4/14/084/17/08

Keywords

  • Aluminum oxide
  • Epitaxy
  • III-V MOSFETs

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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